In<sub>2</sub>Se<sub>3</sub> Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response

Mech, Roop K.; Solanke, Swanand V.; Mohta, Neha; Muralidharan, R.; Nath, Digbijoy N.

doi:10.1109/lpt.2019.2912912

Cited by 22 publications

(13 citation statements)

References 10 publications

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“…In 2 Se 3 ‐3 x O3 x (0 < x < 1) is an intermediate between In 2 Se 3 ( x = 0, E g = 1.37 eV) and In 2 O 3 ( x = 1, E g > 3.2 eV). The formation of oxide shows a secondary transmission PL peak in between 1.37 and 3.2 eV, which has been reported earlier . In the vertical device reported in this study, the top transparent electrode ITO protects In 2 Se 3 from the formation of the oxide layer and hence the PL peak corresponding to the same was not observed.…”

Section: Resultssupporting

confidence: 80%

“…The measured rise time ( τ r ) and fall time ( τ f ) for the vertical device were 20.28 and 20 ms, respectively. The vertical device was thus found to exhibit a response which is 200 times faster than lateral MSM devices based on In 2 Se 3 photodetectors reported earlier . The results were observed for 100 cycles and were found to exhibit repeatable performance without any effect of ambience.…”

Section: Resultsmentioning

confidence: 60%

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High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

Mech

Mohta

Chatterjee

et al. 2020

Physica Status Solidi (a)

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Herein, device demonstration based on vertical transport in multilayer α‐In2Se3 is reported. Photodetectors realized using a metal/α‐In2Se3/indium tin oxide (ITO) vertical junction exhibit clear signature of the band edge in spectral responsivity. The wavelength at 680 nm corresponding to an ultrahigh responsivity of 1000 A W−1 and a detectivity of >1013 cm Hz0.5 W−1 at a bias of 0.5 V. The variation of responsivity and detectivity with optical power density is studied, and a transient response of 20 ms is obtained for the devices (instrument limitation). In addition, an asymmetric barrier height arising out of ITO and Au contacts to a vertical α‐In2Se3 junction resulted in a photovoltaic effect with VOC ≈0.1 V and ISC ≈0.4 μA under an illumination of 520 nm.

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Section: Resultssupporting

confidence: 80%

Section: Resultsmentioning

confidence: 60%

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

Mech

Mohta

Chatterjee

et al. 2020

Physica Status Solidi (a)

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“…This device processing resulted in the fastest response time reported so far for the β-phase of this material (see Table S1, Supporting Information). [16,44,48] We also found highly reproducible results in the eight tested devices of two different sizes. Thus, the figures of merit obtained in this work are expected to better correspond to the inherent properties of the few-layers 2D material than to uncontrollable surface or interface effects as found in single, small devices based on flakes.…”

Section: Resultssupporting

confidence: 66%

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

Claro

Grzonka

Nicoara

et al. 2020

Advanced Optical Materials

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Nevertheless, the research of 2D materials is still in its early stages. The field started with graphene several years ago, [3] but more materials have been added continuously to the list. Among these, transition metal dichalcogenides (TMDC), [4] which have impressive optical properties in the visible range, are currently one of the most studied 2D materials. Devices made of these materials have shown remarkable performance as photodetectors, [5,6] nonvolatile random access memory, [7] or photovoltaics, [8] even when using simple manual exfoliation methods. More recently, 2D indium selenides (In x Se y) have gained attention, [9] due to their bandgap in the visible spectral region, comparable to TMDCs, but also due to several novel properties: InSe exhibits one of the largest mobilities of 2D semiconductor materials, [10] and β-In 2 Se 3 shows good mobility, [11] excellent photoresponsivity, [12] and exotic ferroelectricity [13] (the ordered ferroelectric phase is also called β′-In 2 Se 3 by some authors). [11,13] Transistors with high mobility and on/off ratio have already been realized. [14] Therefore, 2D In 2 Se 3 materials have the potential to address several limitations of the current silicon (Si) and III-V technologies, such as improved mobility and overall performance of transistors for electronics, as well as integrated photodetectors and light emitters in the same material system (same die), all possible on virtually any substrate, including transparent and flexible substrates. [15,16] Yet, the majority of reported devices from 2D materials rely on fabrication methods based on exfoliation and transfer of layers onto other substrates or other 2D materials. While this device fabrication process allows unprecedented flexibility in the combination of materials and therefore has nearly unlimited device design possibilities, [1] it leads typically to individual or few devices and is a slow and tedious process. On the other hand, due to their layered nature, instead of strong covalent bonds (as in Si and compound semiconductors) van der Waals forces exist between the layers. Hence, 2D materials can be grown epitaxially on substrates with completely different lattice constants without creating the strain and the defects commonly found in mismatched heteroepitaxy. This method is called van der Waals (vdW) epitaxy. [17] Nevertheless, the substrate does influence the growth, [18] as it modifies the nucleation of the first layer. Some substrates provide growth with superior quality (amount of defects, 2D materials are considered the future of electronics and photonics, stimulated by their remarkable performance. Among the 2D materials family, β-In 2 Se 3 shows good mobility, excellent photoresponsivity, and exotic ferroelectricity, making it suitable for a wide variety of applications. To date, most reported devices from 2D materials in general, and β-In 2 Se 3 in specific, rely on cumbersome fabrication methods using mechanical exfoliation and transfer of layers onto other substrates. However, for a successful ado...

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“…These reports show that the observed photocurrent is strongly dependent on light wavelength, which would limit the application potential of the broadband light sensor. Advancing the findings of previous reports, our experimental results reveal that the photocurrent is weakly wavelength dependent [ 10 , 15 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 ]. The α roughly deviates by 30% at the three different wavelengths, which is much smaller than the reported values.…”

Section: Resultssupporting

confidence: 86%

“…This characteristic is more flexible and stable for a wide range of potential applications. The broadband light response has been observed in many low-dimensional systems [ 10 , 15 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 ]. These reports show that the observed photocurrent is strongly dependent on light wavelength, which would limit the application potential of the broadband light sensor.…”

Section: Resultsmentioning

confidence: 99%

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

Huang

Hung

Chou

et al. 2021

Sensors

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Broadband photosensors have been widely studied in various kinds of materials. Experimental results have revealed strong wavelength-dependent photoresponses in all previous reports. This limits the potential application of broadband photosensors. Therefore, finding a wavelength-insensitive photosensor is imperative in this application. Photocurrent measurements were performed in Sb2Te3 flakes at various wavelengths ranging from visible to near IR light. The measured photocurrent change was insensitive to wavelengths from 300 to 1000 nm. The observed wavelength response deviation was lower than that in all previous reports. Our results show that the corresponding energies of these photocurrent peaks are consistent with the energy difference of the density of state peaks between conduction and valence bands. This suggests that the observed photocurrent originates from these band structure peak transitions under light illumination. Contrary to the most common explanation that observed broadband photocurrent carrier is mainly from the surface state in low-dimensional materials, our experimental result suggests that bulk state band structure is the main source of the observed photocurrent and dominates the broadband photocurrent.

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In₂Se₃ Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response

Cited by 22 publications

References 10 publications

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

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In2Se3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response

Cited by 22 publications

References 10 publications

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In2Se3

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In2Se3

Wafer‐Scale Fabrication of 2D β‐In2Se3 Photodetectors

The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes

Contact Info

Product

Resources

About

In₂Se₃ Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In₂Se₃

Wafer‐Scale Fabrication of 2D β‐In₂Se₃ Photodetectors