In surface segregation and growth-mode transition during InGaAs growth by molecular-beam epitaxy

Abstract

An In surface segregation effect during the growth of InGaAs on GaAs by molecular-beam epitaxy has been studied by reflection high-energy electron diffraction measurements supported by a segregation model. Indium atoms segregate at a ratio of more than 0.8 under the conventional growth conditions for InGaAs, which causes the formation of accumulated In atoms on the surface. The transition from two-dimensional to three-dimensional growth occurs when the amount of In reaches around 1.7 monolayer with a nominal alloy composition greater than 0.25. This transition determines the upper limit on the In composition of the InGaAs layer for application as an electron channel in modulation-doped field-effect transistors.

Growth and characterization of InAs columnar quantum dots on GaAs substrate

“…Generally, In-Ga atoms intermixing and In segregation during the growth of In͑Ga͒As/GaAs material system play the very important roles in determining the In composition profile along the growth direction. [33][34][35][36][37] For the growth of the 1.8 ML InAs QDs which are directly capped by the thick GaAs capping layer after 5 s GI, In-rich QDs are formed and consequently a longer emission wavelength results due to the smaller effects of the In-Ga atoms intermixing and the In segregation. For the CQD samples including the SL with a lower number of periods, the In-Ga atoms intermixing and the In segregation of the whole CQD structure are enhanced due to the increasing reaction time.…”

Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation inInxGa1−xAs

“…However, there are still relatively few ex-situ studies which analyze the final In-concentration profiles, examples being transmission electron microscopy (TEM) studies the investigations of Walter et al [8] and…”

Quantum coherence in semiconductor nanostructures for improved lasers and detectors.

“…6 As under different AsH 3 partial pressures and different growth temperatures. Lower growth temperatures have been identified previously as reducing surface segregation [11,12], but the role of AsH 3 on QD formation has only been speculated [16,17]. Conditions where surface segregation is suppressed and enhanced are identified.…”

“…A large R indicates a large segregation effect, while a small R indicates little segregation is occurring. The composition of the nth deposited monolayer is given by [11]:…”

“…The surface segregation of In during InGaAs growth on GaAs growth is well documented [8,9,10]. It limits the growth of abrupt quantum wells and introduces interface scattering in channels of InGaAs/AlGaAs high electron mobility devices [11,12]. For…”