In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunneling

Forrest, Stephen R.; Leheny, R. F.; Nahory, R. E.; Pollack, M. A.

doi:10.1063/1.91922

Cited by 167 publications

(49 citation statements)

References 10 publications

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“…Generally, At lower bias, diffusion and generation-recombination currents are dominant and both of these components are highly temperature dependent. At higher bias voltage the tunneling current becomes dominant, which has much weaker temperature dependence 30 .…”

Section: Dark Current Measurementmentioning

confidence: 99%

III-V compound detectors for CO 2 DIAL measurements

et al. 2005

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Profiling of atmospheric carbon dioxide (CO 2 ) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 µm wavelength, for investigating atmospheric CO 2 . This drives the need for high quality detectors at this wavelength. Although 2 µm detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application.In this paper the detector requirements for a long range CO 2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-µm detectivity as high as 3.

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Section: Dark Current Measurementmentioning

confidence: 99%

III-V compound detectors for CO 2 DIAL measurements

et al. 2005

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“…The un-multiplied tunnelling current (Forrest et al, 1980b) defined by Equation (34) will use reported experimental InP (Tan et al, 2008) and InAlAs (Goh et al, 2007b) tunnelling fitting parameters. Since the tunnelling fitting parameters vary with avalanche width, the lowest value, 1.16 for InP and 1.26 for InAlAs, was used for all investigated avalanche widths to assume the worst case scenario.…”

Section: Parameters and Coefficientsmentioning

confidence: 99%

“…The un-multiplied band-to-band tunnelling current, I tunn , is modelled by (Forrest et al, 1980b)      by treating dark carriers as photo-generated carriers.…”

Section: Generalisation Of the Model To Include Tunnelling Currentmentioning

confidence: 99%

Avalanche Photodiodes in High-Speed Receiver Systems

Ong¹,

Green²

2011

Photodiodes - World Activities in 2011

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“…For more than two decades, the reliability of InP/InGaAs photodiode detectors has been studied [1], [2]. Some groups of researchers have been analyzed, the failure mode occurs [3] - [14].…”

Section: Introductionmentioning

confidence: 99%

“…With the increasing bandwidth needs for developing communication applications including cloud computing and storage, mobile multimedia services, high-definition content diffusion, and short communication links tend to be limited by the copper line throughput [1].…”

Section: Introductionmentioning

confidence: 99%

Comparison of intrinsic width for InGaAs PIN photodiode

Othman¹,

Yasin²,

Napiah³

et al. 2014

AIP Conference Proceedings

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Abstract. This paper presents comparison on the different intrinsic width of InGaAs PIN Photodiode. Intrinsic region is a pure semiconductor without any significant dopant species present. In this paper, it will present two different sizes of the intrinsic region for InGaAs PIN Photodiode. This photodiode will be designed by using Atlas Silvaco TCAD Tools. From the structure, the characteristics of the photodiode will be analyzed. The I-layer thickness (or width) is varied from 5μm x 20μm to 8μm x 20μm in order to investigate its effects on the current-voltage (IV) characteristics. These papers are separated into several sections consists of the basic principle, characteristics, advantages and the recent technologies of PIN Photodiode. There will be a specific section on comparison between different intrinsic widths of InGaAs PIN Photodiode.

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In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunneling

Cited by 167 publications

References 10 publications

III-V compound detectors for CO 2 DIAL measurements

III-V compound detectors for CO 2 DIAL measurements

Avalanche Photodiodes in High-Speed Receiver Systems

Comparison of intrinsic width for InGaAs PIN photodiode

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