(In1xMnx)As Diluted Magnetic Semiconductor Quantum Dots with Above Room Temperature Ferromagnetic Transition

Jeon, H. C.; Jeong, Y.S.; Kang, Tae Won; Kim, T.W.; Chung, Kwang Jo; Jhe, W.; Song, Sukhyun

doi:10.1002/1521-4095(20021203)14:23<1725::aid-adma1725>3.0.co;2-q

Cited by 55 publications

(44 citation statements)

References 6 publications

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“…% Li doping in ZnO. As such domain formation conclusively proves the occurrence of ferromagnetism and has been reported for many DMSs, [17][18][19] it can be said that intrinsic ferromagnetism in ZnO is possible with the doping of spin half-alkali atom Li.…”

Section: Resultssupporting

confidence: 75%

Room-temperature ferromagnetism in Li-dopedp-type luminescent ZnO nanorods

2009

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We have observed ferromagnetism in Li-doped ZnO nanorods with Curie temperature up to 554 K. Li forms shallow acceptor states in substitutional zinc sites giving rise to p-type conductivity. An explicit correlation emerges between increase in hole concentration with decrease in magnetization and Curie temperature in ZnO:Li. Occurrence of ferromagnetism at room temperature has been established with observed magnetic domain formation in ZnO:Li pellets in magnetic force microscopy and prominent ferromagnetic resonance signal in electron paramagnetic resonance spectrum. Magnetic ZnO:Li nanorods are luminescent, showing strong near UV emission. Substitutional Li atoms can induce local moments on neighboring oxygen atoms, which when considered in a correlated model for oxygen orbitals with random potentials introduced by dopant atom could explain the observed ferromagnetism and high Curie temperature in ZnO:Li nanorods.

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Section: Resultssupporting

confidence: 75%

Room-temperature ferromagnetism in Li-dopedp-type luminescent ZnO nanorods

2009

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“…The orientation and distribution of domains become nonuniform as Li concentration increases as well as overlapping of domains occurs resulting in decrease in magnetization. Such a domain mapping by MFM provides a conclusive evidence of FM, As this has been reported for many DMS, 9,24,25 it is inferred that observed FM in Li and Na doped ZnO is an intrinsic property of the material arising due to alkali doping.…”

Section: E Mfmsupporting

confidence: 70%

High temperature carrier controlled ferromagnetism in alkali doped ZnO nanorods

Chawla

Jayanthi

Kotnala

2009

Journal of Applied Physics

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Recent efforts in developing spintronic and magneto-optoelectric material for applications have relied on the use of magnetic semiconductors doped with transition metals and have met with limited success. Using a fresh synthesis approach using alkali ions we demonstrate that alkali doped zinc oxide can provide high temperature magnetic semiconductors. We report studies on nanocrystalline powder and pellets of p-type ZnO:Li and ZnO:Na that exhibit ferromagnetism up to 554 K. The ferromagnetic behavior was confirmed from magnetic hysteresis, ferromagnetic resonance, magnetic force microscopy, and explained by a model where substitutional Li + / Na + in cation site induce local magnetic moments on oxygen atoms. Optimum dopant concentrations enable ferromagnetic exchange interaction leading to high Curie temperature.

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“…For instance, above room-temperature ferromagnetism has been reported for Mn-doped InAs nanodots. 51 These inhomogeneities will be most likely sparse enough to be undetectable for standard lab-based XRD. One reported inhomogeneity are the Mn nanoislands reported by Zhang et al 21 Both in their study, as well as in this work, the as-grown thin film samples were capped by an amorphous Se layer in UHV, before transferring them into another UHV analysis chamber for XMCD or scanning tunneling microscopy studies.…”

Section: Discussionmentioning

confidence: 99%

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films

et al. 2014

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We report the growth of Mn-doped Bi2Se3 thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μB/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μB/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L2,3 edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

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(In1xMnx)As Diluted Magnetic Semiconductor Quantum Dots with Above Room Temperature Ferromagnetic Transition

Cited by 55 publications

References 6 publications

Room-temperature ferromagnetism in Li-dopedp-type luminescent ZnO nanorods

Room-temperature ferromagnetism in Li-dopedp-type luminescent ZnO nanorods

High temperature carrier controlled ferromagnetism in alkali doped ZnO nanorods

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films

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