2017
DOI: 10.1007/s10853-017-0940-x
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In2S3 nanoparticles dispersed on g-C3N4 nanosheets: role of heterojunctions in photoinduced charge transfer and photoelectrochemical and photocatalytic performance

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Cited by 57 publications
(17 citation statements)
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“…Among them, the widely studied metal chalcogenides have been reported to be a group of highly efficient catalysts for PEC water splitting . In particular, as a typical III–VI main group chalcogenide, indium sulfide (In 2 S 3 ) has been used as an n-type semiconductor with a relatively narrow band gap of 2–2.45 eV which favors the visible-light absorption photocatalysis applied in photovoltaics, solar cells, and PEC water splitting. In general, a defective compound of the formulation M 2 X 3 can be considered as a compound derived from II–VI semiconductor by replacing the Group II metals by Group III elements. That is, in the crystalline structure of In 2 S 3 , the sulfide forms a cubic or hexagonal close-packed structure in which part of the cation sites remain empty .…”
Section: Introductionmentioning
confidence: 99%
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“…Among them, the widely studied metal chalcogenides have been reported to be a group of highly efficient catalysts for PEC water splitting . In particular, as a typical III–VI main group chalcogenide, indium sulfide (In 2 S 3 ) has been used as an n-type semiconductor with a relatively narrow band gap of 2–2.45 eV which favors the visible-light absorption photocatalysis applied in photovoltaics, solar cells, and PEC water splitting. In general, a defective compound of the formulation M 2 X 3 can be considered as a compound derived from II–VI semiconductor by replacing the Group II metals by Group III elements. That is, in the crystalline structure of In 2 S 3 , the sulfide forms a cubic or hexagonal close-packed structure in which part of the cation sites remain empty .…”
Section: Introductionmentioning
confidence: 99%
“…13 More importantly, the plentiful traits of In 2 S 3 for relatively narrow band gap of 2−2.45 eV which could broaden the light response to visible region, good conductivity due to the presence of the cation or anion vacancies, 14 stable chemical composition, and a comparatively negative conduction band edge corresponding to H + /H 2 as well as moderate charge transport make it a promising photoanode. 11 It is usually adopted as sensitizer to establish heterostructures such as In 2 S 3 /g-C 3 N 4 , 9 In 2 S 3 /ZnO, 15 and In 2 S 3 /MoS 2 . 16 However, there are few reports involving crystal phase control of In 2 S 3 as well as the investigation of PEC performance of pristine In 2 S 3 structures.…”
Section: ■ Introductionmentioning
confidence: 99%
“…The peaks located at 444.8 eV and 452.3 eV can be assigned to In 3d 5/2 and In 3d 3/2 , respectively, in the In 2 S 3 lattice. While, there is a additional satellite peak at 442.2 eV, presenting the existence of reduced indium element . As shown in Figure F, the peak at 161.6 eV is ascribed to S 2p .…”
Section: Resultsmentioning
confidence: 58%
“…In this function, n=1 for direct transition, while n=4 for indirect transition. BiVO 4 is a direct transition semiconductor, while In 2 S 3 is an indirect transition semiconductor ,. From K−M plot, the band gap energy of BiVO 4 and In 2 S 3 are estimated to be 2.4 eV and 2.14 eV, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…On further investigation at a higher magnification in figure 2 (e), two distinct structures attributed to C3N4 were perceived. The 2D layers of conjugated sheet of tri-s-triazine specifies the interlayer stacking distance of 0.329 nm -0.333 nm, and corresponds to the (002) plane of 2θ = 26.6˚ denoted as C3N4 structure [42]. Apart from that, the amorphous structure of C3N4 was also observed which displayed as a corrugated structure [30].…”
Section: Transmission Electron Microscope (Tem) Analysismentioning
confidence: 99%