InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices

Daumann, W.; Ellrodt, P.; Brockerhoff, W.; Bertenburg, R.M.; Reuter, R.; Auer, U.; Molls, W.; Tegude, F.‐J.

doi:10.1109/55.537084

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High-electron Mobility Transistors1

Introduction1

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1999

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Cited by 13 publications

(2 citation statements)

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“…It is important to note that the dual-gate HEMT has suppressed kink and hence impact ionization (26), but the noise is slightly degraded compared with that of single-gate devices. The circuit applications for dual-gate (cascode) HEMTs are multiple (27).…”

Section: High-electron Mobility Transistorsmentioning

confidence: 99%

Microwave Solid State Devices

Schreurs

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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Section: High-electron Mobility Transistorsmentioning

confidence: 99%

Microwave Solid State Devices

Schreurs

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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“…The drawback of this material concept is the smaller band gap in the channel compared to the GaAs-based HEMT's, resulting in impact ionization [4] and the related kink effect [5]. This can be suppressed by either layer structure optimization [6] or using a dual-gate layout [7].…”

Section: Introductionmentioning

confidence: 99%

Reliability testing of InP HEMT's using electrical stress methods

Zanden

Schreurs

Menozzi

et al. 1999

IEEE Trans. Electron Devices

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In this paper, we discuss the results of three different electrical stress tests on InP-based HEMT's and their implications toward reliability. These are hot electron (HE) stress, transmission line pulse (TLP) measurements, and RF overdrive stress. Some processing parameters have been varied to investigate their influence on reliability issues. HE stress is performed on a set of Si 3 N 4 passivated devices with increasing recess width. Degradation is observed to be largely dependent on recess width, due to changes at the InAlAs-Si 3 N 4 interface. With TLP measurements, an ESD-like reliability study is performed on devices with different types of Schottky barriers. Although epilayers with In0:40Al0:60 as Schottky material show improved breakdown and leakage characteristics over In0:52Al0:48As, pulsed stress tests reveal an earlier breakdown. Finally, the degradation under large-signal RF overdrive stress is determined with a nonlinear network measurement system (NNMS). Both on-and off-state degradation are studied with this setup. Results appeared to be strongly dependent on the phase difference between the stress voltage waves applied at the device ports.

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