InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage

Zaknoune, M.; Bonté, Bruno; Gaquière, C.; Cordier, Y.; Druelle, Y.; Théron, D.; Crosnier, Y.

doi:10.1109/55.709638

Cited by 87 publications

(19 citation statements)

References 9 publications

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“…InSb semiconductor has the highest electron and hole mobilities and also has the highest electron saturation velocity of all semiconductors. The electron mobility in InSb quantum well is in excess of 30,000 cm 2 /Vs which is five times higher than that of state-of-the-art uncooled GaAs material [261][262][263][264][265].…”

Section: Developments In Indium Phosphide Hemtsmentioning

confidence: 99%

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Ajayan

Nirmal

2015

Superlattices and Microstructures

131

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Section: Developments In Indium Phosphide Hemtsmentioning

confidence: 99%

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

Ajayan

Nirmal

2015

Superlattices and Microstructures

131

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“…The strain-relief buffer relaxes lattice mismatch between the substrate and the In containing device layers. An In composition of 0.35 was chosen for the device layers because this value gives a large conduction band discontinuity for good electron confinement while avoiding a decrease in dopant efficiency due to traps which arise at lower [3]. The double-doped structure was chosen because in the AlGaAs/InGaAs system it has yielded superior power performance.…”

Section: Epitaxial Growth and Device Fabricationmentioning

confidence: 99%

“…This so-called "metamorphic" HJFET is expected to exhibit excellent power performance when the In composition is adjusted to about 0.3 for improved Schottky characteristics and electron confinement [2], but until now there has been only one report of power performance [3]. The device of [3] exhibited excellent performance, including an output power and power added efficiency (PAE) of 15.6 dBm and 25% at a frequency of 60 GHz. These results are very promising for high frequency power operation, but is too small for many power applications like mobile telephones, which can require 30 dBm or more.…”

Section: Introductionmentioning

confidence: 99%

Double-doped In/sub 0.35/Al/sub 0.65/As/In/sub 0.35/Ga/sub 0.65/As power heterojunction FET on GaAs substrate with 1 W output power

Contrata

Iwata

1999

IEEE Electron Device Lett.

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A double-doped metamorphic In 0:35 Al 0:65 As/ In 0:35 Ga 0:65 As power heterojunction FET (HJFET) on GaAs substrate is demonstrated. The HJFET exhibits good dc characteristics, with gate forward turn on voltage of 1.0 V, breakdown voltage of 20 V, and maximum drain current of 490 mA/mm. Under RF operation at a frequency of 950 MHz, a power added efficiency of 63% with associated output power of 31.7 dBm is obtained at a gate width of 12.8 mm. This large gate width and state-of-the-art power performance in metamorphic HJFETS were enabled by a selective etching, sputtered WSi gate process and low surface roughness due to an Al 0:60 Ga 0:40 As 0:69 Sb 0:31 strain relief buffer.

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“…The InAs/GaAs system has become one of the most popular heterostructures for its applications in the high-speed devices and optoelectronic devices [1][2][3][4]. The advanced material growth technologies such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) enable the growth of very thin highly doped layers and these will play an important role in future photonic and quantum electronic devices like high electron mobility transistors HEMTs, modulation doped quantum wells (QW).…”

Section: Introductionmentioning

confidence: 99%