2016
DOI: 10.3390/electronics5020031
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InAlGaN/GaN HEMTs at Cryogenic Temperatures

Abstract: Abstract:We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm 2¨V´1¨s´1 combined with a sheet carrier density of 1.93ˆ10 13 cm´2 leading to a remarkably low sheet resistance of 44 Ω/˝are measured at 4 K. A strong improvement of Direct current (DC) and Radio frequency (RF) characteristics is observed at low temperatures. The… Show more

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Cited by 25 publications
(8 citation statements)
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“…L g =3000nm. It should be mentioned that these mobility values are in good agreement with literature results obtained on GaN HEMTs by Hall effect or transistor parameter extraction [10,22], pointing out the good quality of our GaN/Si technological process. In Fig.…”
Section: Transfer Characteristicssupporting
confidence: 89%
“…L g =3000nm. It should be mentioned that these mobility values are in good agreement with literature results obtained on GaN HEMTs by Hall effect or transistor parameter extraction [10,22], pointing out the good quality of our GaN/Si technological process. In Fig.…”
Section: Transfer Characteristicssupporting
confidence: 89%
“…It has been recently shown, that carrying out the metal organic vapour phase epitaxy (MOVPE) in a close coupled shower head reactor leads to unintentional gallium incorporation (Hiroki et al, 2013;Smith et al, 2014;Ben Ammar et al, 2017) and thus the formation of quaternary InAlGaN alloys. These quaternary alloys could exhibit better performances and strain free alloys as one may tune independently the gap and the lattice constant (Kneissl et al, 2006;Dogmus et al, 2016). Therefore, this work is focused on quaternary InAlGaN as its growth is still challenging.…”
Section: Introductionmentioning
confidence: 99%
“…Cryogenic power electronics is the next step in the evolution of power electronics technology, enabling higher power density, greater efficiency, and better system performance in several applications [7][8][9][10]. Low-temperature electronics have potential uses in deep space and terrestrial applications, including magnetic levitation transportation systems, military all-electric vehicles, medical diagnostics, cryogenic instrumentation, and superconducting magnetic energy storage systems [11,12].…”
Section: Introductionmentioning
confidence: 99%