InAs film grown on Si(111) by metal organic vapor phase epitaxy

High quality InAs and GaSb thin layers grown on Si (111)

“…Also, a change of growth parameters directly affects the electrical characteristics of the samples. As previously stated, lowering the AsH 3 flow and raising the growth temperature results in higher mobility films [6].…”

“…Previously, we have reported MOVPE growth of thick InAs layers on Si (1 1 1) substrates [6,7]. However, even for samples of 2 mm thickness, holes remained on the surface.…”

“…Deposition of InAs on Si using one nucleation step results in layers with holes remaining on the surface [6]. To investigate the effect of incorporating more nucleation layers, we have grown a set of six samples with one to six nucleation layers.…”

“…We have studied the effect of lowering the V/III ratio on the surface morphology using the same Counts per second (a.u.) 6 temperature for the InAs layer growth by means of AFM measurement. The study has been performed by keeping the TEGa molar fraction constant and lowering the TMSb molar fraction.…”

“…After the nucleation step, the temperature is ramped up and the nucleation layer is annealed for 6 min. This annealing step helps Ostwald ripening and improves the InAs surface coverage [6]. In the case of multiple nucleation layers, the same nucleation and annealing steps are repeated.…”