InAs/GaAs(001) epitaxy: kinetic effects in the two-dimensional to three-dimensional transition

Placidi, E.; Arciprete, F.; Fanfoni, M.; Patella, F.; Orsini, Elisabetta; Balzarotti, A.

doi:10.1088/0953-8984/19/22/225006

Cited by 36 publications

(27 citation statements)

References 61 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It has been experimentally found that the nucleation of InAs islands on GaAs(001), above the 1.6 ML critical thickness for the 2D-3D transition, ends within a fraction of a monolayer (≈0.2 ML) [29,30]. Therefore, for the applied growth conditions, the nucleation is sudden and, since the migration length of the adatoms is much larger than the average separation of the nuclei, the probability of two or more adatoms meeting is much smaller than that of the adatoms meeting an existing island.…”

Section: Resultsmentioning

confidence: 99%

Coarsening effect on island-size scaling: The model case InAs/GaAs(001)

et al. 2012

View full text Add to dashboard Cite

The distributions of the size of islands and of the capture zones are discussed comparatively, both experimentally and numerically, for the case of a sudden nucleation process with and without coarsening. The experiments were performed by growing InAs islands on GaAs(001) and the coarsening was altered by varying the temperature. In the two-dimensional kinetic Monte Carlo simulations a single-species diffusing adatom was taken into account, and the coarsening was altered in this case by modifying the binding energy between adatoms and islands. The results show that size and capture zone distributions overlap only when coarsening can be disregarded.

show abstract

Section: Resultsmentioning

confidence: 99%

Coarsening effect on island-size scaling: The model case InAs/GaAs(001)

et al. 2012

View full text Add to dashboard Cite

show abstract

“…Figure 1b shows the photocurrent map recorded under 916 nm illumination. The buried QDs appear as dark areas in the PC-image due to wetting layer thinning [6] around the QDs. The 500x500 nm 2 PC-image was recorded in 10 nm scanning steps.…”

Section: Resultsmentioning

confidence: 99%

“…PbS QDs were synthesized according to Scholes as reported in [4] and mixed with [6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) in order to improve charge transport. PbS:PCBM thin films were prepared by spin coating from colloidal solution (40% PbS QDs with 3 nm diameter covered with oleic acid ligands and 12 w/w% PCBM in chlorobenzene) at 8000 rpm onto thin gold electrodes (3nm Cr, 9 nm Au) on a glass slide fabricated by thermal evaporation.…”

mentioning

confidence: 99%

AFM‐based photocurrent imaging of epitaxial and colloidal QDs

Madl

Brezna

Strasser

et al. 2011

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We present photocurrent images and spectroscopic results of sub‐surface InAs quantum dots (QDs) and thin films of colloidal PbS QDs obtained at room temperature and under ambient conditions by means of photoconductive atomic force microscopy (pcAFM) under 916 nm and 900 nm illumination respectively. InAs QDs appear as dark areas in the photocurrent image, because imaging was performed at the wetting layer excitation energy. The PbS nanocrystal film imaged at the energy of the first excitonic transition displays local variations of the photoactivity. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…[1][2][3][4][5][6][7][8][9] Among the many reconstructions that this surface can present, the As-rich GaAs(001)β2(2 × 4) reconstruction is one of the most popular substrates for growth. Numerous experimental [10][11][12][13][14][15][16][17] and theoretical [18][19][20][21][22] papers have established the unit cell for this reconstruction.…”

Section: Introductionmentioning

confidence: 99%

Accelerated molecular dynamics study of theGaAs(001)β2(2×4)/c(2×8)surface

Lin

Fichthorn

2012

Phys. Rev. B

View full text Add to dashboard Cite

We develop an accelerated molecular dynamics method that has several advantages over conventional rare-event methods. We apply our method using a semiempirical Tersoff-Abell potential to understand the disordered structure of the GaAs(001)β2(2 × 4) surface at various temperatures. Our simulations indicate that the selfreconstruction of this surface is mediated by As-row-dimer and As-trench-dimer shifting events that typically occur over microsecond-millisecond times at temperatures of interest and that trench-dimer shifting occurs more rapidly than row-dimer shifting. Our calculations indicate that the equilibrium surface consists of an approximately equal mixture of β2(2 × 4) and c(2 × 8) domains, in agreement with an experimental scanningtunneling microscopy study. Due to strain along the [110] direction, there is a tendency for the surface to form long runs of in-phase As-row-and As-trench dimers. There are weak correlations between As-row-dimer pairs along the [110] direction such that the free energy of the c(2 × 8) surface is slightly lower than that of the β2(2 × 4) surface. This finding is also in agreement with the experiment and indicates the dynamical nature of this important substrate for thin-film growth.

show abstract

InAs/GaAs(001) epitaxy: kinetic effects in the two-dimensional to three-dimensional transition

Cited by 36 publications

References 61 publications

Coarsening effect on island-size scaling: The model case InAs/GaAs(001)

Coarsening effect on island-size scaling: The model case InAs/GaAs(001)

AFM‐based photocurrent imaging of epitaxial and colloidal QDs

Accelerated molecular dynamics study of theGaAs(001)β2(2×4)/c(2×8)surface

Contact Info

Product

Resources

About