InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 µm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy

Kim, Kwang Woong; Cho, Nam Ki; Ryu, Seon-Young; Song, Jin Dong; Choi, Won Jun; Lee, Jung Il; Park, Jung Ho

doi:10.1143/jjap.45.8010

Cited by 12 publications

(4 citation statements)

References 18 publications

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“…1). A clear blue shift is observed in sample Sb 18 , with a linear dependence on the third root of the excitation power, as expected for a type II system where the photo-excited carriers are spatially separated by the band bending. 12 In contrast, the peak energy of samples Sb 0 and Sb 8 is independent of the excitation power.…”

supporting

confidence: 77%

“…Note that the J th values obtained for our reference GaAs-capped InAs QDs are not as low as some previously reported. 18,19 This is probably due to problems with calibration of Al during the growth of the cladding layers, resulting in an unoptimized structure. Nevertheless, since the three samples were grown under the same conditions, this does not affect the comparative purpose of this work.…”

mentioning

confidence: 99%

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Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers

Utrilla

Ulloa

Guzmán

et al. 2013

Applied Physics Letters

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Type I and type II band alignment InAs/GaAs quantum dot laser diodes (LD) are demonstrated using a 5-nm-thick GaAsSb capping layer with moderate or high Sb contents. The threshold current density, external differential quantum efficiency, and characteristic temperature substantially improve when Sb is used in the capping layer. Nevertheless, in the type II LD, lasing arises from type I-like excited states with much shorter lasing wavelengths than expected. This is likely related to the observed inhibition of the ground state transition in the spontaneous emission, which would also reduce the radiative current and, therefore, the threshold current.

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supporting

confidence: 77%

mentioning

confidence: 99%

Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers

Utrilla

Ulloa

Guzmán

et al. 2013

Applied Physics Letters

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“…On the other hand, there is a reduction by a factor of two in ℎ in both type-I and type-II Sb-containing QD LDs with respect to the reference Sb-free QD LD. Note that the ℎ values obtained for our reference GaAs-capped InAs QDs are not as low as some previously reported [205,206]. This is probably due to problems with calibration of Al during the growth of the cladding layers, resulting in an unoptimized structure.…”

Section: Threshold Current and Efficiencycontrasting

confidence: 53%

Tuning the properties of InAs/GaAs quantum dots through a modified capping layer: Application to optoelectronic devices

Lomas¹,

David²

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Quantum-dot (QD) technology has become a very transversal technology finding application in an increasing number of scientific and industrial fields. At the forefront of this development is the well-studied InAs/GaAs QD system. However, the limitations imposed by the fixed InAs-GaAs band offsets and by the difficulties to control the QD morphology due to the capping process still difficult the precise control of QD band structure that would allow the required design in different applications. The use of a certain capping layer (CL) material different than GaAs has been particularly employed to tune the ground state energy of InAs/GaAs QDs through strain and band structure engineering, so achieving the longwavelength telecommunication windows as one of the most pursued targets. This work is mainly focused on the achievement of a higher tunability of the properties of InAs/GaAs QDs by the application of thin GaAs(Sb)(N) CLs and the optimization of the capping process in order to improve their suitability to any optoelectronic device, and more in particular to laser diodes and solar cells. GaAs(Sb)(N)/InAs/GaAs QDs are a highly versatile system in which the use of Sb and N allows for the tunability of the QD ground state while providing a huge degree of freedom regarding the QD-CL band-alignment, according to the requirements of the field of application. quieren, por lo tanto, enfoques alternativos con el fin de mejorar la eficiencia de conversión. En particular, se demuestra que parámetros como la profundidad del pozo de potencial en el CL, su espesor, y su estructura, así como el alineamiento de bandas resultante, juegan un papel importante en la extracción y el transporte de portadores en células solares de QD.

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“…A remarkable optical characteristic of the 0D nanostructure has made them ideal for IR detection [ 2 ] and potential semiconductor lasers. [ 3 ] InAs/GaAs QD lasers are a stirring source for telecommunication applications [ 4 ] and long‐wavelength emission. [ 5,6 ] A careful investigation of the QD laser structure is crucial for revealing the characteristic device parameters, a different mode of operation, [ 7,8 ] and time‐ and temperature‐resolved optical performance.…”

Section: Introductionmentioning

confidence: 99%

Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure

Gupta

Mudi

Yelashetty

et al. 2021

Physica Status Solidi (b)

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The impact of the built‐in electric field on the emission characteristics of an InAs/GaAs quantum dot (QD) laser structure is investigated by performing systematic spectroscopic measurements. Photoluminescence (PL) features related to the ground state (GS) and excited state (ES) transitions of a QD ensemble are clearly observed in the temperature range of 8–300 K. The cross‐sectional transmission electron microscopy image and a systematic analysis of temperature‐dependent PL data confirm the excellent crystalline and optical quality of the QD laser structure. It is found that the values of the activation energy associated with GS and ES transitions of the QD sample reasonably match with the energy splitting of PL features. This successfully explains the trends observed in temperature‐dependent PL spectra, where thermal transfer of carriers to the wetting/barrier layer via QD excited states is proposed to be a major decay channel. An interesting observation is made where the integrated intensity of PL features increases up to 75 K and falls thereafter during the heating cycle. Such a peak‐like behavior of the integrated intensity is explained by invoking the temperature dependence of the built‐in electric field, which is estimated from the analysis of Franz–Keldysh oscillations observed in photoreflectance spectra and is important in the design of QD lasers.

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InAs/GaAs Quantum-Dot Laser Diode Lasing at 1.3 µm With Triple-Stacked-Layer Dots-in-a-Well Structure Grown by Atomic Layer Epitaxy

Cited by 12 publications

References 18 publications

Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers

Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers

Tuning the properties of InAs/GaAs quantum dots through a modified capping layer: Application to optoelectronic devices

Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure

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