InAs/GaAs quantum-dot lasers grown on on-axis Si (001) without dislocation filter layers

Abstract

InAs/GaAs quantum dot (QD) laser monolithically grown on silicon is one of the potential approaches to realizing silicon-based light sources. However, the mismatch between GaAs and Si generates a high density of threading dislocations (TDs) and antiphase boundaries (APBs), which trap carriers and adversely affect device performance. In this paper, we present a simple method to reduce the threading dislocation density (TDD) merely through GaAs buffer, eliminating the intricate dislocation filter layers (DFLs) as well as any intermediate buffer layers whose compositions are different from the target GaAs. An APB-free epitaxial 2.5 µm GaAs film was grown on exact Si (001) by metalorganic chemical vapor deposition (MOCVD) with a TDD of 9.4 × 106 cm−2. InAs/GaAs QDs with a density of 5.2 × 1010 cm−2 were grown on this GaAs/Si (001) virtual substrate by molecular beam epitaxy (MBE) system. The fabricated QD laser has achieved a single facet room temperature continuous-wave output power of 138 mW with a threshold current density of 397 A/cm2 and a lasing wavelength of 1306 nm. In this work, we propose a simplified method to fabricate high-power QD lasers, which is expected to promote the application of photonic integrated circuits.

Turnkey locking of quantum-dot lasers directly grown on Si

“…Along with the high thermal stability of epitaxial QD lasers on Si-capable of continuous-wave operation above 150 °C (ref. 43)-this approach is beneficial to the robustness of ECL in high-temperature operation.…”

Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket

“…The monolithic integration of III-V light sources on Si through heteroepitaxial growth with molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has gained major attention in recent years [18][19][20][21][22][23][24], highlighting the merits of using quantum dots (QDs) as the gain material [25][26][27][28], especially with their improved tolerance to crystalline defects [29][30][31]. Through extensive defect mitigation efforts, e.g., by growing asymmetric step-graded filters to reduce threading dislocation densities (TDDs) and introducing trapping layers to block misfit dislocations (MDs), QD lasers grown by MBE on Si have been demonstrated with excellent performance and good reliability [32][33][34][35].…”