InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

Abstract

This letter presents the lasing properties of InAs/GaAs quantum dot lasers with InGaP cladding layers grown by solid-source molecular-beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm2, an internal loss of 1.35 cm−1, and an internal quantum efficiency of 31% at room temperature. At a low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm2 are measured.

Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

“…Understanding the growth process on HIS can accomplish potential technological value improvements of practical devices and applications, such as low-threshold current density lasers, 6) 1.3-µm-wavelength laser diodes, 7) modelocked lasers, 8) semiconductor saturable absorber mirrors (SESAMs), 9) and superluminescent light-emitting diodes, 10) among others.…”

Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers

“…Epitaxial regrowth in GaAs-based structures is problematic, mainly due to the Al-containing layers within the structure which, when exposed to oxygen, result in poor regrowth interfaces, deleterious to the laser performance. Previous solutions have included the use of: Al-free epitaxial structures; 3) steam oxidation for current confinement; 4) in-situ etching and regrowth within a metal organic vapour phase epitaxy (MOVPE) reactor; 5) and antiguided 6) or buried ridge 7) structures where Al layers were exposed to oxygen. True buried heterostructures devices utilising InGaP cladding layers have been realised, 8) but this is problematic due to the need to precisely control the InGaP lattice constant and thus removes the ability to decrease the vertical beam divergence.…”

A GaAs-based self-aligned stripe distributed feedback laser

“…As with DFB lasers, buried heterostructures are commonplace on InP, where DFB gratings are incorporated within the buried heterostructure laser to realise rapidly modulated telecoms lasers. However, they are not commonly available on GaAs and approaches to their realisation include regrowth over potentially oxidised aluminium-containing layers, etch/regrowth in the same reactor [4], or use of InGaP cladding [5]. We have previously reported use of a GaAs/InGaP regrowth process to enable self-aligned stripe (SAS) lasers to be manufactured on GaAs [6].…”