InAs/GaAs quantum dot narrow ridge lasers epitaxially grown on SOI substrates for silicon photonic integration

Wei, Wen-Qi; Feng, Qi; Guo, Jingjing; Guo, Ming-Chen; Wang, Jianhuan; Wang, Zi-Hao; Wang, Ting; Zhang, Jianjun

doi:10.1364/oe.402174

Cited by 37 publications

(21 citation statements)

References 23 publications

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“…Subsequently, rapid post-annealing was performed at 385 °C (n-contact) and 425 °C (p-contact) for conforming the ohmic contact between metal and semiconductors. Then, process steps were as follows: standard lithography, inductively coupled plasma (ICP) etching, SiO 2 deposition, reactive ion etching (RIE), and electrode evaporation were fabricated as in [ 48 ]. The cross-sectional of the laser structure is shown in the SEM image in Figure 9 a.…”

Section: Resultsmentioning

confidence: 99%

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Wei

et al. 2022

Micromachines

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The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 107 cm−2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 1010 InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 μm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm2 for a 4-μm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III−V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future.

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Section: Resultsmentioning

confidence: 99%

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Wei

et al. 2022

Micromachines

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“…Additional material characterization details are included in Supplemenraty Section II. Based on these high-quality trenched GaAs/SOI templates, the standard InAs/GaAs QD laser diode structures 39,47 are grown as shown in Fig. 3a.…”

Section: Resultsmentioning

confidence: 99%

“…From silicon photonic integration perspectives, all active and passive silicon photonic components should be on the same SOI platform, therefore, there is a strong urge to develop an SOI-based monolithic laser integration solution to efficiently couple the light into silicon waveguides (WGs). Up to date, there are relatively limited researches focusing on direct growth of SOI-based lasers [37][38][39][40] , and usually the lasers are located on top silicon of SOI with thick III-V buffer layers which are not capable of being coupled with passive waveguides. In case of heterogeneous bonding techniques mentioned above, the coupling from bonded lasers to silicon WGs has been well established by evanescent coupling 7 .…”

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confidence: 99%

Monolithic Integration of Embedded III-V Lasers on SOI

Wang

Wei²,

et al. 2022

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Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 oC are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -7.35 dB. The results presented here provide a scalable and low-cost epitaxial method for realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

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“…Besides intensively studied broad area lasers, narrow ridge lasers that guarantee fundamental transverse electronic mode lasing are now garnering more attention [82][83][84]. Reducing the ridge width down to a few microns, a lower threshold current and better heat dissipation are also expected due to the reduced injection area and efficient current confinement.…”

Section: Fp Lasermentioning

confidence: 99%

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

et al. 2022

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With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits have emerged as a promising solution for high-performance Intra-/Inter-chip optical communication. However, a lack of a Si-based light source remains to be solved due to the inefficient light-emitting property of Si. To tackle the absence of a native light source, integrating III-V lasers, which provide superior optical and electrical properties, has been extensively investigated. Remarkably, the use of quantum dots as an active medium in III-V lasers has attracted considerable interest because of various advantages, such as tolerance to crystalline defects, temperature insensitivity, low threshold current density and reduced reflection sensitivity. This paper reviews the recent progress of III-V quantum dot lasers monolithically integrated on the Si platform in terms of the different cavity types and sizes and discusses the future scope and application.

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InAs/GaAs quantum dot narrow ridge lasers epitaxially grown on SOI substrates for silicon photonic integration

Cited by 37 publications

References 23 publications

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser

Monolithic Integration of Embedded III-V Lasers on SOI

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

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