InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth

InAs Quantum Dots of Engineered Height for Fabrication of Broadband Superluminescent Diodes

“…There are a myriad of choices in selecting such OCT light sources i) femtosecond or fiber lasers that are dispersed to produce super-continuum light and swept source lasers (Hartl et al, 2001;Wang et al, 2003), ii) thermal sources, and iii) superluminescent diodes (Sun et al, 1999;Liu et al, 2005;Lv et al, 2008;Haffouz et al, 2010). Although the reported OCT tomograms with the highest axial resolution (1.8m) were so far achieved in research laboratories with a photonic crystal fibre based source (Wang et al, 2003), superluminescent diodes are considerably lower in cost and complexity as well as being smaller in size, which makes them more attractive for mass production.…”

“…However, for the designed wide spectrum QD-SLDs it becomes an effective intrinsic advantage for broadening the emission spectrum. Experimentally, using five layers of InAs/GaAs QDs grown under identical growth conditions in a molecular beam epitaxy system (Liu et al, 2005), SLDs with full width at half maximum of ~110nm at a central wavelength of 1.1µm have been made. For high resolution optical coherence tomography applications around 1060nm an even wider broadband spectrum is required.…”

Static Characterization of InAs/AlGaAs Broadband Self-Assembled Quantum Dot Lasers

“…Three-dimensionally quantum confining medium of electrons,, holes, and excitons in semiconductor microstructures known as quantum dots (QDs) is predicted to produce new physical phenomena and improve optoelectronic devices significantly [1], [2],[ [3], [4]. The atomlike state density in QDs associated with three-dimensional confinement of electrons and holes would cause an increase of optical gain and limit thermal carrier distribution.…”

Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth

“…Indeed, emission spectrum with full-width at half-maximum (FWHM) of 110 nm was reported using 2.5 kA injection current under pulsed mode [3]. The corresponding light output power was about 32 mW.…”