InAs/GaAs quantum dots on germanium‐on‐insulator‐on‐silicon substrates (GeOI) using molecular beam epitaxy

Abstract

InAs/GaAs quantum dots (QDs) on GeOI were grown at various growth temperatures and in‐depth photoluminescence study was conducted to characterize the optical properties of QDs on GeOI. InAs QDs with room temperature emission of 1.26 μm and areal density of 4.8 × 1010 cm‐2 were obtained. It was shown that high QD growth temperature helps to promote uniform dot size distribution but In‐Ga intermixing may lead to excessive thermal escape of carriers. Photoluminescence studies suggest that QDs on GeOI have good optical quality but with small amount of defects, acting as non‐radiative recombination centers (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)