InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

Abstract

According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.

InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

“…The epitaxial structures for the SML-QD SLD devices in this study are grown by a Riber 32P solid-source molecular beam epitaxy (MBE) machine on n-GaAs (001) substrates as reported in our previous study. [20] The active region of the devices consists of a chirped InAs/GaAs SML-QD structure, which comprises 12 InAs/GaAs SML-QD layers to broaden the emission spectra from the SML-QD SLDs. In the chirped SML-QD structure, each QD layer is formed by ten-cycled deposition of InAs and GaAs.…”

Power improvement in ridge bent waveguide superluminescent light-emitting diodes based on GaN quantum dots

“…For instance, Ruizhe Yao et al [10] have reported chirped InAs QDs grown by molecular beam epitaxy and applying In x Al 1−x As SRLs to increase the width of the spectrum. The application of post-growth annealing, p-doping in addition to chirped QD multilayer have been used many times to improve the spectral width [11][12][13][14][15][16][17]. Hybrid structures as QW/QD for the active region have been presented frequently aim to tailor the emission bandwidth and gain spectrum of quantum dot SLEDs by incorporating QD layers in compositionally modulated QWs [18][19][20][21][22][23][24].…”

Broadband and high-speed swept external-cavity laser using a quantum-dot superluminescent diode as gain device

“…The characteristic of size inhomogeneity occurring in self-assembled quantum dot material is beneficial to broadening the gain spectrum. [23][24][25][26][27][28][29][30][31] With low ground state density, the gain spectrum is easily extended by filling to the higher state. [32] Therefore, the QD gain device is suitable for broadband swept laser.…”