InAs/GaSb Type II superlattice barrier devices with a low dark current and a high-quantum efficiency

Klipstein, P. C.; Avnon, Eran; Benny, Y.; Fraenkel, Rami; Glozman, A.; Grossman, Steven H.; Klin, O.; Langoff, L.; Livneh, Y.; Lukomsky, Inna; Nitzani, M.; Shkedy, Lior; Shtrichman, I.; Snapi, N.; Tuito, Avi; Weiss, Eliezer

doi:10.1117/12.2049825

Cited by 18 publications

(8 citation statements)

References 10 publications

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“…Therefore, standard thermography cameras operating around 5 µm cannot be used for this view. Instead a dedicated near-IR camera system of type SCD Cardinal is used, which has a detector sensitive in the wavelength range of 0.9-1.7 µm [18]. To prevent saturation of the camera by the expected intense IR emission and to facilitate absolute calibration, an additional interference filter was used with a narrow transmission window around 1.6 µm.…”

Section: Sample Arrangement and Instrumentationmentioning

confidence: 99%

Investigation of transient melting of tungsten by ELMs in ASDEX Upgrade

et al. 2017

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Repetitive melting of tungsten by power transients originating from edge localized modes (ELMs) has been studied in the tokamak experiment ASDEX Upgrade. Tungsten samples were exposed to H-mode discharges at the outer divertor target plate using the Divertor Manipulator II (DIM-II) system. The exposed sample was designed with an elevated sloped surface inclined against the incident magnetic field to increase the projected parallel power flux to a level were transient melting by ELMs would occur. Sample exposure was controlled by moving the outer strike point (OSP) to the sample location. As extension to previous melt studies in the new experiment both the current flow from the sample to vessel potential and the local surface temperature were measured with sufficient time resolution to resolve individual ELMs. The experiment provided for the first time a direct link of current flow and surface temperature during transient ELM events. This allows to further constrain the MEMOS melt motion code predictions and to improve the validation of its underlying model assumptions. Post exposure ex-situ analysis of the retrieved samples confirms the decreased melt motion observed at shallower magnetic field line to surface angles compared to that at leading edges exposed to the parallel power flux.

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Section: Sample Arrangement and Instrumentationmentioning

confidence: 99%

Investigation of transient melting of tungsten by ELMs in ASDEX Upgrade

et al. 2017

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“…A variety of engineered heterostructures, also called barrier structures, such as nBn [13], pBp [14], pBn [15], p-π-M-n [16], pBiBn [17], CBIRD [18] have been demonstrated. These devices allow for reduction of the dark-current compared to standard p-i-n photodiodes by suppressing the generationrecombination (G-R) current in the absorption region thanks to the insertion of a high band gap material [19].…”

Section: I-introductionmentioning

confidence: 99%

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Delmas¹,

Kwan²,

Debnath³

et al. 2019

J. Phys. D: Appl. Phys.

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In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and thickness are grown by molecular beam epitaxy. Nearly straincompensated SLs on GaSb exhibiting an energy band gap between 105 to 169 meV at 77K are obtained.Second, from electronic band structure calculation, material parameters are extracted and compared for the different grown SLs. Finally, two p-i-n device structures with different SL periods are grown and their electrical performance compared. Our investigation shows that an alternative SL design could potentially be used to improve the device performance of diffusion-limited devices for long-wavelength infrared detection.

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“…The dark current in the barrier device of Fig. 2 and in all of our XBp test devices is only about one order of magnitude larger than the Hg x Cd 1-x Te Rule-07 value 6 . We are able to simulate the full spectral response of an FPA made from the pB p p device shown in Fig.…”

Section: Design and Performance Of T2sl Barrier Devicesmentioning

confidence: 52%

Long Wave Infrared Type II Superlattice Focal Plane Array Detector

Klipstein¹,

Avnon²,

Benny³

et al. 2017

Def. Sc. Jl.

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The XBn/XBp family of barrier detectors enables diffusion limited dark currents comparable with HgxCd1-xTe Rule-07 and high quantum efficiencies. SCD’s XBp type II superlattice (T2SL) detector contains InAs/GaSb and InAs/AlSb T2SLs, and was designed for the long wave infrared (LWIR) atmospheric window using k · p based modeling of the energy bands and photo-response. Wafers are grown by molecular beam epitaxy and are fabricated into focal plane array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridisation, under-fill, and back-side polishing. The 640 × 512 pixel, 15 μm pitch, detector goes by the name of ‘Pelican-D LW’ and exhibits a quantum efficiency of ~ 50 per cent with background limited performance at an operating temperature of 77 K. It has a cut-off wave length of ~ 9.5 μm, with a pixel operability of above 99 per cent. The detector gives a very stable image with a residual non uniformity of below 0.04 per cent over its useful dynamic range. A new digital read-out integrated circuit has been designed so that the complete detector closely follows the configuration of SCD’s MWIR Pelican-D detector.

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InAs/GaSb Type II superlattice barrier devices with a low dark current and a high-quantum efficiency

Cited by 18 publications

References 10 publications

Investigation of transient melting of tungsten by ELMs in ASDEX Upgrade

Investigation of transient melting of tungsten by ELMs in ASDEX Upgrade

Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

Long Wave Infrared Type II Superlattice Focal Plane Array Detector

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