InAs/GaSb type-II superlattices for high performance mid-infrared detectors

Haugan, H. J.; Brown, Gail J.; Szmulowicz, Frank; Grazulis, L.; Mitchel, W. C.; Elhamri, S.; Mitchell, William D.

doi:10.1016/j.jcrysgro.2005.01.006

Cited by 32 publications

(19 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The value of H t (InSb) = 0.7 eV is found by fitting the experimental bandgap of 26/27Å SL sample [32], which is of the same magnitude as previous works [12,26]. We use this value throughout the following paper.…”

Section: Numerical Results and Discussionmentioning

confidence: 93%

“…To demonstrate the good accuracy and capability of present theory in predicting the SL band-gap, we have tested two sets of experimental SL samples [32]: The splitting is clearly more pronounced in the valence subbands than in the conduction subband. This is because the electron states are less affected by the MIA effect than the hole states, which is manifested by the microscopic interface Hamiltonian given by Eqs.…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

“…The early works comparing such two types of interfaces found that (i) a smaller band-gap energy and higher optical absorption can be achieved for InSb-like interfaces[29] and (ii) InSb-like interfaces are smoother than GaAs-like ones on SL constituent Band-gap energy as a function of InAs (GaSb) layer width L A (L B ) at the fixed GaSb (InAs) layer width L B (L A ) at T=10 K. The solid and dashed lines are theoretical results calculated with and without the MIA effect, respectively, and the solid triangles are experimental data[32].…”

mentioning

confidence: 99%

See 2 more Smart Citations

Effect of microscopic interface asymmetry on optical properties of short-period InAs/GaSb type-II superlattices

Dong

et al. 2015

Thin Solid Films

View full text Add to dashboard Cite

Section: Numerical Results and Discussionmentioning

confidence: 93%

Section: Numerical Results and Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Effect of microscopic interface asymmetry on optical properties of short-period InAs/GaSb type-II superlattices

Dong

et al. 2015

Thin Solid Films

View full text Add to dashboard Cite

“…Since the electron mass is two orders of magnitude smaller than the heavy hole mass, changes in the InAs layer thickness lead to much greater changes in the band gap than changes in the GaSb layer thickness. However, the thickness of the GaSb layer affects the strength of optical absorption and can be used to fine tune the band gap [3]. For LWIR SL studies, we use the modified envelope function approximation model [4] to calculate the optical properties of the two SL structures: 9 MLs InAs/7 MLs GaSb SLs (noted as 9/7) and 16/7, which include 0.5 ML thick InSb-like interfaces.…”

Section: Resultsmentioning

confidence: 99%

Design Effects on the Material Properties of InAs∕GaSb Superlattices

Haugan¹,

Brown²,

Szmulowicz³

et al. 2011

AIP Conference Proceedings

Self Cite

View full text Add to dashboard Cite

Modification of the optical reflectance spectra of epitaxial gallium arsenide by weak magnetic fields J. Appl. Phys. 112, 073513 (2012) Nanocluster Si sensitized Er luminescence: Excitation mechanisms and critical factors for population inversion Appl. Phys. Lett. 101, 141907 (2012) Hyperspectral optical near-field imaging: Looking graded photonic crystals and photonic metamaterials in color Appl. Phys. Lett. 101, 141108 (2012) Photonic crystal fabrication in lithium niobate via pattern transfer through wet and dry etched chromium mask J. Appl. Phys. 112, 074303 (2012) Optically induced two-dimensional photonic quasicrystal lattices in iron-doped lithium niobate crystal with an amplitude mask Abstract. InAs/GaSb superlattice (SL) materials are of great interest for infrared (IR) detection applications. There is tremendous design flexibility in these superlattices but every design change has an impact on the epitaxial growth conditions for optimized performance. In here, we discuss how a simple design change of InAs width affects the material properties. As the InAs layer thickness increases from 9 monolayers (MLs) to 16 MLs for a fixed GaSb layer thickness of 7 MLs, the spectral intensity measured by photoconductivity decreases by two orders of magnitude, while the calculated absorption strength decreases by less than a factor of two. Since the measured transport properties of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) SLs were very different-majority carriers in MWIR (LWIR) SLs were holes (electrons)-the large decrease in the photoresponse is due to changes in extrinsic material factors that affect these charge carrier properties.

show abstract

“…These buffer layers are usually undoped and hence p-type due to the native acceptors. If in-plane electrical transport measurements of the superlattice, which are a useful indicator of material quality and a predictor of infrared detector performance, 7 are desired, the buffer/substrate properties must be known and controlled. We report here a study of the electrical properties of highly transmitting, lightly doped n-type GaSb substrates and of undoped p-type GaSb buffer layers grown on those substrates.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

et al. 2015

Self Cite

View full text Add to dashboard Cite

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers. C

show abstract

InAs/GaSb type-II superlattices for high performance mid-infrared detectors

Cited by 32 publications

References 12 publications

Effect of microscopic interface asymmetry on optical properties of short-period InAs/GaSb type-II superlattices

Effect of microscopic interface asymmetry on optical properties of short-period InAs/GaSb type-II superlattices

Design Effects on the Material Properties of InAs∕GaSb Superlattices

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

Contact Info

Product

Resources

About