2013
DOI: 10.1186/1556-276x-8-333
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InAs-mediated growth of vertical InSb nanowires on Si substrates

Abstract: In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play… Show more

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Cited by 15 publications
(23 citation statements)
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“…This difference might be associated with the fact that the reactant adatoms diffused from the substrate surface tend to gather around the sidewalls of the thin and short InAs nanowires, resulting in the local enhancement of the radial growth rate of GaSb around the InAs stems. Finally, with enough growth time, the grown nanowires have an almost uniform diameter along the growth direction; the same behavior has also been observed in the growth of InSb nanowires based on short InAs stems by MOCVD [40].
Fig.
…”
Section: Resultssupporting
confidence: 71%
“…This difference might be associated with the fact that the reactant adatoms diffused from the substrate surface tend to gather around the sidewalls of the thin and short InAs nanowires, resulting in the local enhancement of the radial growth rate of GaSb around the InAs stems. Finally, with enough growth time, the grown nanowires have an almost uniform diameter along the growth direction; the same behavior has also been observed in the growth of InSb nanowires based on short InAs stems by MOCVD [40].
Fig.
…”
Section: Resultssupporting
confidence: 71%
“…The TEM results confirm the self-catalyzed growth mechanism with pure In droplet on the NW top, as reported earlier in Refs. [12] and [24], and the good stability of the ZB crystal phase in InSb NWs regardless of the growth parameters employed. A more detailed discussion of this stability based on the surface energy considerations is given in the Supplementary material.…”
Section: Resultsmentioning
confidence: 96%
“…It is difficult to nucleate InSb NWs directly on a dissimilar substrate, which is why they are often grown on InAs NW stems [12]. Furthermore, the top InSb segment rapidly widens with respect to InAs stem [6][7][8][9][10][11][12][13]. Similar effect is observed for ternary InAsSb segments [14,15].…”
Section: Introductionmentioning
confidence: 91%
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