InAs-Nanowire-Based Broadband Ultrafast Optical Switch

Liu, Junting; Khayrudinov, Vladislav; Yang, He; Sun, Yue; Matveev, B. A.; Remennyi, M. A.; Yang, Kejian; Haggrén, Tuomas; Lipsanen, Harri; Wang, Frank; Zhang, Baitao; He, Jingliang

doi:10.1021/acs.jpclett.9b01626

Cited by 20 publications

(19 citation statements)

References 49 publications

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“…and MXenes [41], as shown in Table 2. In addition, it is also comparable to our previous results on InAs NWs [42], indicating a strong saturable absorption capability. The imaginary part of the third-order nonlinear optical susceptibility (Imχ 3 ) can be calculated with the following formula [41]:…”

Section: B Ultrafast Carrier Dynamics Of Inasp Nwssupporting

confidence: 90%

Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

et al. 2021

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Indium arsenide phosphide (InAsP) nanowires (NWs), a member of the III-V semiconductor family, have been used in various photonic and optoelectronic applications thanks to their unique electrical and optical properties such as high carrier mobility and adjustable band gap. In this work, we synthesize InAsP NWs and further explore their nonlinear optical properties. The ultrafast carrier dynamics and nonlinear optical response are thoroughly studied based on the nondegenerate pump probe and Z-scan experimental measurements. Two different characteristic carrier lifetimes (∼2 and ∼15 ps) from InAsP NWs are observed during the excited-carrier relaxation process. Based on the physical model analysis, the relaxation process can be ascribed to the carrier cooling process via carrier-phonon scattering and Auger recombination. In addition, based on the measured excited-carrier lifetime and Pauli-blocking principle, we discover that InAsP NWs show strong saturable absorption properties at the wavelengths of 532 and 1064 nm. Last, we demonstrate for the first time a femtosecond (∼426 fs) solid-state laser based on an InAsP NWs saturable absorber at 1.04 μm. We believe that our work provides a better understanding of the InAsP NWs optical properties and will further advance their photonic applications in the near-infrared range.

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Section: B Ultrafast Carrier Dynamics Of Inasp Nwssupporting

confidence: 90%

Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

et al. 2021

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“…Smaller σ es /σ gs ratio in nonlinear nanomaterials is easier to achieve SA. [45] For three-energy level system as shown in Figure 6a-c, both Bi 2 S 3 and ReS 2 films can be treated as a slow saturable absorber due to the effective spontaneous decay time much longer than the light pulse duration (35 fs) [53] in our experiment. By solving the rate equation, modified Frantz-Nodvik Equations ( 8) and ( 9) [50,51] can be used to describe the optical physics.…”

Section: Mechanism For Improved Nlo Properties Of Bi 2 S 3 /Res 2 Filmmentioning

confidence: 81%

“…Meanwhile, this result is comparable to MoTe 2 /MoS 2 (−555.45 cm GW −1 ). [44] Saturable intensity (I s ) and modulation depth (ΔM) [45] are basic parameters to assess the NLO properties of materials, which can be obtained in Equation (5).…”

Section: Highly Enhanced Sa Of P-bi 2 S 3 /Res 2 and C-bi 2 S 3 /Res 2 Filmsmentioning

confidence: 99%

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Luo

Yang

et al. 2021

Adv Materials Inter

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and modulation depth (MoS 2 ≈ 12.7%) [7] in the early time. Different from group-VI TMDs, ReS 2 as a group-VII TMDs is a direct bandgap (≈1.5 eV) semiconductor in both monolayer and bulk crystal. [8] Meanwhile, ReS 2 demonstrates high stability, reasonable carrier mobility (≈30 cm 2 •V −1 s −1 ), [9] and high current on/ off ratio (≈10 6 ). [8] However, ReS 2 shows poor NLO response such as low SA coefficients (−5.99 cm GW −1 ) [1] and modulation depth (≈3%), [10] which severely hinders its application in ultrafast laser. [6,11] Recently, some 2D ReS 2 based van der Waals (vdW) heterostructures such as ReS 2 /MoS 2 , [12] ReS 2 /ReSe 2 , [13] ReS 2 /WSe 2 , [14] and ReS 2 / Graphene [15] have been constructed to improve linear optoelectronic devices [16] such as photodetectors, field-effect transistors, and solar cells, owing to their synergistic effect in the heterostructures. However, few NLO experiments have been demonstrated in ReS 2 based heterostructures. The influence of band alignment on NLO response still need to be unveiled.Bi 2 S 3 can be an elementary component for vdW heterostructure due to its high figure of merit (FOM ≈6.17 × 10 −14 esu cm), [17] environmental stability, excellent absorption coefficient (≈10 5 cm −1 ), [18] and tunable bandgap (from 1.28 to 1.84 eV [19][20] ). Furthermore, Bi 2 S 3 demonstrates relatively high SA coefficient (−63.38 cm GW −1 ) [17] and modulation depth (≈5.7%). [21] Complementarity in Bi 2 S 3 and ReS 2 would promise the heterostructure of Bi 2 S 3 and ReS 2 for "one plus one greater than two" NLO properties. Unlike traditional bonded heterostructures, these 2D vdW heterostructures can be easily integrated without lattice-matching limitation. [22] However, most vdW heterostructures are constructed by mechanical stacking or physical transfer process, which are not scalable for practical applications. [23] Besides, early methods may result in uncontrollable stacking orientation and unavoidable contamination in the transfer process. [24] Some recent reports of two-step vdW vapor epitaxial growth provide an opportunity towards scalable integration of 2D materials. [25,26] Importantly, the vdW vapor epitaxial growth shows the advantages: (I) efficient control in size and convenient growth in scale; (II) atomic uniformity at the interface; (III) layer-by-layer formation without alloys; (IV) compatibility with the current industrial technology. Even though Sb 2 Se 3 /WS 2 , [27] Bi 2 S 3 /MoS 2 , [28] and SnSe 2 /MoS 2 [24] have been successfully demonstrated by vdW vapor epitaxial growth, there is no report on the Bi 2 S 3 /ReS 2 , to our best knowledge. 2D van der Waals (vdW) heterostructure provides a novel platform to modulate linear and nonlinear optical (NLO) properties for optical devices by interface engineering. However, NLO properties and mechanisms based on vdW heterostructures are far from complete understanding. Herein, two-step vdW vapor epitaxial growth by either physical or chemical vapor deposition methods is successfully demonstrated to synthesize unifor...

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“…A large number of materials have been proved to have strong saturable absorption effect, such as metal pnictide, transition metal‐doped glass, organic dye solutions, and a series of low‐dimensional materials that emerged in recent years. [ 22,26 ] These low‐dimensional materials include carbon nanotubes, [ 27–29 ] graphene, [ 30,31 ] topological insulators (TIs), [ 32 ] black phosphorus, [ 33,34 ] transition metal chalcogenides, [ 35–39 ] semimetals, [ 40 ] etc. Keller et al used a semiconductor film with saturable absorption effect to generate mode‐locked pulses based on solid‐state laser systems, which manifest the debut of SESAM.…”

Section: Sas and Pulsed Laser Generationmentioning

confidence: 99%

Plasmonic Saturable Absorbers

Zhao

Liu

Qiu

et al. 2021

Advanced Photonics Research

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Plasmonic materials are able to spatially confine light to a nanometer scale far smaller than the diffraction limit, resulting in drastically enhanced electrical field strength and stimulating applications in nonlinear optics, energy, and biomedicine. Resonant excitation of plasmonic nanostructures by ultrafast pulses results in a subpicosecond‐scale transient photobleaching that originates from the thermalization and cooling of hot carriers, which manifests strong optical nonlinearity that is leveraged for optical modulation and switching. Herein, recent advances in the use of noble and non‐noble metal‐based plasmonic materials as saturable absorbers (SAs) in both solid‐state and fiber lasers for the generation of Q‐switched and mode‐locked pulses are discussed. Starting with a brief introduction on the operation mechanisms of pulsed lasers and photophysics of plasmonics, a discussion on the nonlinear optical (NLO) properties as well as the recent developments of pulsed lasers driven by these plasmonic SAs is focused upon. The pros and cons of using different plasmonic materials for SAs in terms of their material properties and linear/NLO responses are further analyzed. Along with a short summary of the current progress of plasmonic SAs, highlight future challenges in the development of plasmonic SAs for practical laser systems are finally highlighted.

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InAs-Nanowire-Based Broadband Ultrafast Optical Switch

Cited by 20 publications

References 49 publications

Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption

Plasmonic Saturable Absorbers

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InAs-Nanowire-Based Broadband Ultrafast Optical Switch

Cited by 20 publications

References 49 publications

Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

Facile Two‐Step van der Waals Epitaxial Growth of Bi2S3/ReS2 Heterostructure with Improved Saturable Absorption

Plasmonic Saturable Absorbers

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Facile Two‐Step van der Waals Epitaxial Growth of Bi₂S₃/ReS₂ Heterostructure with Improved Saturable Absorption