2012
DOI: 10.1587/transele.e95.c.1369
|View full text |Cite
|
Sign up to set email alerts
|

InAs Nanowire Circuits Fabricated by Field-Assisted Self-Assembly on a Host Substrate

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
8
0

Year Published

2013
2013
2014
2014

Publication Types

Select...
5
2

Relationship

0
7

Authors

Journals

citations
Cited by 8 publications
(8 citation statements)
references
References 17 publications
0
8
0
Order By: Relevance
“…To demonstrate circuit feasibility of InAs NW‐FETs, we have implemented a single balanced down‐conversion mixer using three gated NW devices ( M 1 , M 2 and M 3 ). Measured data show a low‐frequency voltage gain, G VC,low −f , of 6 dB, a 3 dB bandwidth (BW), f RF,BW−3 dB , of 2 GHz and a unity voltage gain at 5 GHz, adding further circuit capabilities for NWs [6–8].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…To demonstrate circuit feasibility of InAs NW‐FETs, we have implemented a single balanced down‐conversion mixer using three gated NW devices ( M 1 , M 2 and M 3 ). Measured data show a low‐frequency voltage gain, G VC,low −f , of 6 dB, a 3 dB bandwidth (BW), f RF,BW−3 dB , of 2 GHz and a unity voltage gain at 5 GHz, adding further circuit capabilities for NWs [6–8].…”
Section: Introductionmentioning
confidence: 99%
“…. Measured data show a low-frequency voltage gain, G VC,low−f , of 6 dB, a 3 dB bandwidth (BW), f RF,BW−3 dB , of 2 GHz and a unity voltage gain at 5 GHz, adding further circuit capabilities for NWs [6][7][8]. 2 Si substrates, which are cleaved after growth.…”
mentioning
confidence: 99%
“…The positional control of small objects such as nanowires with a high degree of accuracy has been a challenge for practical applications of nanotechnology. In particular, the assembly of small objects on a substrate has been intensively investigated, and techniques using the Langmuir-Blodgett approach, 1,2) evaporation-induced assembly, 3,4) mechanical forces, [5][6][7][8] magnetic fields, 9,10) and electric field assist [11][12][13][14][15][16][17] have been reported. An approach using electric fields has a significant advantage in that small objects can be precisely aligned at predefined sites on a substrate.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, many techniques for the alignment of nanosized materials on a substrate through various approaches have been reported. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] Furthermore, some groups have successfully fabricated electric devices and circuits such as Schottky diodes, 5) transistors, 19,20) LEDs, 21) sensors, 8,13,22,23) generators, 24) and logic gates 16,[25][26][27] with assembled nanosized materials. The techniques for the alignment use the Langmuir-Blodgett approach, 1,2,23) evaporation-induced assembly, 3,4) mechanical force, [5][6][7][8]19,22,24,27) magnetic field 9,10) electric field assist, [11][12]…”
Section: Introductionmentioning
confidence: 99%
“…A typical configuration of electrodes is an electrode pair facing each other, and a rod-like nanomaterial such as a nanowire bridges the electrode pair by applying bias to the electrodes. [13][14][15][16][17]25) Owing to the positional accuracy and arbitrary property of electrode design, this technique has high affinity with integrated circuits or discrete circuits using nanowire devices.…”
Section: Introductionmentioning
confidence: 99%