InAs quantum dot DFB lasers on GaAs for uncooled 1310 nm fiber communication

Zhang, L.; Wang, R.; Zou, Z.; Gray, A.L.; Olona, L.; Newell, T.C.; Webb, David J.; Varangis, P.M.; Lester, L. F.

doi:10.1109/ofc.2003.316101

Cited by 9 publications

(5 citation statements)

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“…Complete details regarding the QD DFB laser's structure, as well as information on importance device parameters such as the relaxation oscillation frequency, damping rate, linewidth and linewidth enhancement factor, etc. can be found in [22][23][24]. The LI curve of the device at 298 K is included in Fig.…”

Section: Methodsmentioning

confidence: 99%

Tunable microwave signal generator with an optically-injected 1310nm QD-DFB laser

Hurtado¹,

Mee²,

Nami³

et al. 2013

Opt. Express

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Tunable microwave signal generation with frequencies ranging from below 1 GHz to values over 40 GHz is demonstrated experimentally with a 1310nm Quantum Dot (QD) Distributed-Feedback (DFB) laser. Microwave signal generation is achieved using the period 1 dynamics induced in the QD DFB under optical injection. Continuous tuning in the positive detuning frequency range of the quantum dot's unique stability map is demonstrated. The simplicity of the experimental configuration offers promise for novel uses of these nanostructure lasers in Radio-overFiber (RoF) applications and future mobile networks.

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Section: Methodsmentioning

confidence: 99%

Tunable microwave signal generator with an optically-injected 1310nm QD-DFB laser

Hurtado¹,

Mee²,

Nami³

et al. 2013

Opt. Express

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“…Promising applications of these 1.3 µm quantum-dot lasers include low-cost and low-power-consumption transmitters for 10 Gb s −1 metro/access and local area networks. However, before their installation in the practical system, their narrow modulation bandwidth of around 5 GHz [9,10] and low temperature stability with the characteristic temperature of less than 100 K [11,12] should be improved.…”

Section: Introductionmentioning

confidence: 99%

Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s⁻¹directly modulated lasers and 40 Gb s⁻¹signal-regenerative amplifiers

Sugawara¹,

Hatori²,

Ishida³

et al. 2005

J. Phys. D: Appl. Phys.

227

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This paper presents recent progress in the field of semiconductor lasers and optical amplifiers with InAs-based self-assembled quantum dots in the active region for optical telecommunication. Based on our design in terms of the maximum bandwidth for high-speed modulation and p-type doping in quantum dots for high temperature stability, we realized temperature-insensitive 10 Gb s−1 laser diodes on a GaAs substrate at 1.3 µm. The output waveform at 10 Gb s−1 maintained a clear eye opening, average output power and extinction ratio without current adjustments from 20°C to 70°C. We developed ultrawide-band high-power amplifiers in the 1.5 µm wavelength region on an InP substrate. The amplifier showed ultrafast gain response under gain saturation, and enabled signal regeneration at 40 Gb s−1 by suppressing the ‘1’-level noise due to the beating between the signal and amplified spontaneous emission. We present our amplifier module with polarization diversity to enable a stable polarization-insensitive performance, and also, discuss prospects for polarization-insensitive quantum dots by the close stacking technique.

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“…1 Introduction The performance of quantum dot devices is presently the subject of great interest [1]. In particular, several studies have concentrated on the sensitivity of quantum dot semiconductor lasers to the influence of optical feedback [2,3]. Unlike bulk or quantum well semiconductor lasers, these devices have symmetric gain curves [1] and experiments [4] have demonstrated very small phaseamplitude coupling (a-parameter).…”

mentioning

confidence: 99%

Quantum dot semiconductor lasers with optical feedback

Huyet

O’Brien

Hegarty

et al. 2004

phys. stat. sol. (a)

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We analyse the sensitivity of quantum dot semiconductor lasers to optical feedback. While bulk and quantum well semiconductor lasers are usually extremely unstable when submitted to back reflection, quantum dot semiconductor lasers exhibit a reduced sensitivity. Using a rate equation approach, we show that this behaviour is the result of a relatively low but nonzero line-width enhancement factor and strongly damped relaxation oscillations.

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InAs quantum dot DFB lasers on GaAs for uncooled 1310 nm fiber communication

Cited by 9 publications

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Tunable microwave signal generator with an optically-injected 1310nm QD-DFB laser

Tunable microwave signal generator with an optically-injected 1310nm QD-DFB laser

Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s⁻¹directly modulated lasers and 40 Gb s⁻¹signal-regenerative amplifiers

Quantum dot semiconductor lasers with optical feedback

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InAs quantum dot DFB lasers on GaAs for uncooled 1310 nm fiber communication

Cited by 9 publications

References 0 publications

Tunable microwave signal generator with an optically-injected 1310nm QD-DFB laser

Tunable microwave signal generator with an optically-injected 1310nm QD-DFB laser

Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1directly modulated lasers and 40 Gb s−1signal-regenerative amplifiers

Quantum dot semiconductor lasers with optical feedback

Contact Info

Product

Resources

About

Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s⁻¹directly modulated lasers and 40 Gb s⁻¹signal-regenerative amplifiers