Incidence energy effect and impact assessment during homoepitaxial growth of nickel on (001), (111) and (110) surfaces

Kinetic Monte Carlo Simulation of Au Monolayer Evolution on Cu(110)

“…However, when temperature decreases and/or the flux increases, the growth is dominated by deposition process favoring presence of isolated adatoms. These results are good agreement of many theoretical and experimental investigations have been devoted to study the island nucleation and monolayer growth of thin films …”

“…These results are good agreement of many theoretical and experimental investigations have been devoted to study the island nucleation and monolayer growth of thin films. [19,[54][55][56][57][58] For the rate of deposition 1 ML s À1 (Figure 8a), we have the density of the islands is higher than the density of adatom, while in Figure 8c always for 1 ML s À1 and 200 K, we have the reverse. For 0.1 ML s À1 and 300 K (Figure 8a and d) always the density of the islands is higher than the density of adatom.…”

Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing

“…In turn, the use of modern computer simulation techniques, in particular the molecular dynamics (MD) method, and interatomic interaction potentials having ever-growing accuracy in description of metal-semiconductor systems behavior, allows comprehensive studies of iron silicides formation. The molecular dynamics method has been successfully used to simulate the growth processes of various metal [36][37][38][39], semiconductor [40][41][42], and also metalsemiconductor films [43][44][45] where the influence of the substrate temperature, deposition angle, and surface orientation on the structural properties of the synthesized films were examined in detail. In particular, the MD simulation of the growth of a hydrogenated silicon film on Si (001) substrate were used for studying the influence of the incidence angle of the deposited atoms.…”

Kinetic Monte Carlo simulation of polycrystalline silver metal electrodeposition: scaling of roughness and effects of deposition parameters

“…Daw and Basket 42,43 developed the so-called Embedded Atom Method (EAM) to describe atomic interactions. The EAM method has been widely used to describe atomics in metallic systems during simulation of thin film growth 44,45 and metallic glasses. 46–48 Through this approach, the energy for an atom i is given by the sum of both multi-body and pairwise contributions, as expressed by the following equationwhere i and j denote atoms.…”