Incident ion energy spectrum and target sputtering rate in dc planar magnetron

Czekaj, Dionizy; Goranchev, B.; Hollmann, E. K.; Volpyas, V. A.; Zaytsev, A. G.

doi:10.1016/0042-207x(91)90075-t

Cited by 13 publications

(5 citation statements)

References 10 publications

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“…This manifests in a corresponding shift of the ion energy distribution, which is peaked around ò s and broadened approximately Δò t 0.25 ò 0 . Hence, the approximate average ion energy at the target is argued to be 75% of the energy corresponding to the target voltage V 0 , in accordance with observations in [31,32,50,73,74].…”

Section: B E T T W Wsupporting

confidence: 84%

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N₂plasma

Trieschmann

Ries

Bibinov

et al. 2018

Plasma Sources Sci. Technol.

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Direct current magnetron sputtering of Al by Ar and Ar/N 2 low pressure plasmas was characterized by experimental and theoretical means in a unified consideration. Experimentally, the plasmas were analyzed by optical emission spectroscopy, while the film deposition rate was determined by weight measurements and laser optical microscopy, and the film composition by energy dispersive x-ray spectroscopy. Theoretically, a global particle and power balance model was used to estimate the electron temperature T e and the electron density n e of the plasma at constant discharge power. In addition, the sputtering process and the transport of the sputtered atoms were described using Monte Carlo models-TRIDYN and dsmcFoam, respectively. Initially, the non-reactive situation is characterized based on deposition experiment results, which are in agreement with predictions from simulations. Subsequently, a similar study is presented for the reactive case. The influence of the N 2 addition is found to be twofold, in terms of (i) the target and substrate surface conditions (e.g., sputtering, secondary electron emission, particle sticking) and (ii) the volumetric changes of the plasma density n e governing the ion flux to the surfaces (e.g., due to additional energy conversion channels). It is shown that a combined experimental/simulation approach reveals a physically coherent and, in particular, quantitative understanding of the properties (e.g., electron density and temperature, target surface nitrogen content, sputtered Al density, deposited mass) involved in the deposition process.

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Section: B E T T W Wsupporting

confidence: 84%

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N₂plasma

Trieschmann

Ries

Bibinov

et al. 2018

Plasma Sources Sci. Technol.

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“…The obtained sputter yields are shown in figure 6. Taking into account that the energy of the impinging ions is only 75% of the discharge voltage [86][87][88], the experimental sputter yields compare well with the calculated sputter yields of the simulation packages SRIM [77] and Tridyn [89,90]. Equation ( 1) is valid only for pure argon sputtering of Ti.…”

Section: The Metallic Flux Tisupporting

confidence: 52%

Reactive sputter deposition of TiN layers: modelling the growth by characterization of particle fluxes towards the substrate

Mahieu

Depla²

2009

J. Phys. D: Appl. Phys.

148

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The growth of reactively sputtered TiN films is discussed. First, an overview of the existing models in the literature that describe the development of the orientation and microstructure is given. Then, these models are critically confronted with the results of experiments published in the literature and performed by the authors. The latter experiments focus especially on the determination of the energy flux and atomic N/Ti flux towards the substrate and lead to the conclusion that these fluxes towards the substrate play a key role in the growth of the TiN films. This relation between these fluxes and the microstructure of the TiN films gives further evidence to the previously published extended structure zone model.

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“…In a magnetron discharge, the average energy of the ions bombarding the target is defined by the discharge voltage, V d , and simulations show that this average ion energy E i is approximately 75% of the discharge voltage. [41][42][43] The number of ions hitting the target can be retrieved from the discharge current, I d , and the effective electron emission yield ␥ eff . 44 Hence, by recording the discharge current during the sputtering of a metal target in pure argon at a constant discharge voltage, one can calculate the sputter yield at a given ion energy from the weight loss of the target, ⌬m, using the following equation:…”

Section: Simulationsmentioning

confidence: 99%

Compositional effects on the growth of Mg(M)O films

Saraiva

Georgieva

Mahieu

et al. 2010

Journal of Applied Physics

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The influence of the composition on the crystallographic properties of deposited Mg(M)O (with M=Al, Cr, Ti, Y, and Zr) films is studied. For a flexible control of the composition, dual reactive magnetron sputtering was used as deposition technique. Two different approaches to predict the composition are discussed. The first is an experimental way based on the simple relationship between the deposition rate and the target-substrate distance. The second is a route using a Monte Carlo based particle trajectory code. Both methods require a minimal experimental input and enable the user to quickly predict the composition of complex thin films. Good control and flexibility allow us to study the compositional effects on the growth of Mg(M)O films. Pure MgO thin films were grown with a (111) preferential out-of-plane orientation. When adding M to MgO, two trends were noticed. The first trend is a change in the MgO lattice parameters compared to pure MgO. The second tendency is a decrease in the crystallinity of the MgO phase. The experimentally determined crystallographic properties are shown to be in correspondence with the predicted properties from molecular dynamics simulations

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Incident ion energy spectrum and target sputtering rate in dc planar magnetron

Cited by 13 publications

References 10 publications

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N₂plasma

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N₂plasma

Reactive sputter deposition of TiN layers: modelling the growth by characterization of particle fluxes towards the substrate

Compositional effects on the growth of Mg(M)O films

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Incident ion energy spectrum and target sputtering rate in dc planar magnetron

Cited by 13 publications

References 10 publications

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N2plasma

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N2plasma

Reactive sputter deposition of TiN layers: modelling the growth by characterization of particle fluxes towards the substrate

Compositional effects on the growth of Mg(M)O films

Contact Info

Product

Resources

About

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N₂plasma

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N₂plasma