Including Radiation Effects and Dependencies on Process-Related Variability in Advanced Foundry SPICE Models Using a New Physical Model and Parameter Extraction Approach

The Influence of Device Geometry on the Partially Depleted Soi Transistor Tid Hardness

“…Radiation induced threshold voltage shift of this structure leads to leakage current increase and can cause parametrical failure of the complex device due to increased current supply. Radiation hardness research of separate transistors can offer opportunity to evaluate complex devices' hardness [1][2][3][4][5][6][7][8][9][10][11] or serve as the basis for the fundamental modeling of the separate transistor [5,[12][13][14][15][16][17].…”

Complex for automated measurement and processing of BJTs and MOSFETs characteristics for extremal applications

“…In existing publications for devices of different type and operating conditions inside special-purpose electronic equipment, the task of measurement of electrical characteristics and circuit model parameter extraction are solved independently [6] [9]. Measuring tools and measuring routines that are used are not described in detail, and in some cases are closely guarded proprietary secrets.…”