Incoherent interface of InAs grown directly on GaP(001)

Abstract

We report molecular beam epitaxial growth of InAs on GaP(001), which has the largest lattice mismatch (11%) among all the arsenides and phosphides. Reflection high-energy electron diffraction and high-resolution transmission electron microscopy were used to optimize the growth and characterize the epilayer. It is found that the growth mode can be controlled by the surface V/III ratio: three-dimensional and two-dimensional layer-by-layer growths under As-stable and In-stable conditions, respectively. In both cases, a regular network of pure edge-type (90°) misfit dislocations with a spacing of 4 nm was formed directly at the heterointerface, which corresponds to 85% of degree of strain relaxation. The epilayers grown under In-stable conditions have relatively smooth surfaces with low threading dislocation densities. This is owing to the fact that the interface misfit dislocations were exclusively of the edge-type which have no threading component and which relieve strain most effectively. The results demonstrate the ability to control the growth mode as well as the misfit dislocation nucleation type.

A two-dimensional α-As/α-AsP van der Waals heterostructure for photovoltaic applications

“…An analogous puckered shape and a tiny lattice mismatch assured the feasibility of the proposed 2D α-As/α-AsP vdWH. In the heterostructure, previous experimental 47–49 and theoretical 50–52 studies have proved that a lattice mismatch less than 10% was acceptable. Therefore, we construct the 2D α-As/α-AsP vdWH by stacking 2D α-AsP on 2D α-As.…”

First-Principles Study of Strain Modulation in S3P2/Black Phosphorene vdW Heterostructured Nanosheets for Flexible Electronics

“…This high lattice mismatch is tolerable because fo the good ductility of 2D materials and high matching ability of vdW heterojunction. In fact, many previous theoretical − and experimental − works have demonstrated that the ∼10% lattice mismatching was acceptable in heterostructures. The interlayer distance between S 3 P 2 and BP layers is estimated to be 3.004, 3.081, and 3.218 Å for the AB 1 , AB 2 , and AB 3 stacking, respectively.…”

Liquid phase epitaxial growth of lattice mismatched InSb, GaInAs and GaInAsSb on GaAs substrates using a quaternary melt

“…There have been reports of direct growth of InSb on GaAs by molecular beam epitaxy (MBE), chemical vapor deposition (CVD) and liquid phase epitaxy (LPE) [5] (and references therein). However, a large number of dislocation densities are observed in the grown layers ð$10 12 cm À2 Þ [6]. Woodall et al [7] observed that during MBE growth of these lattice mismatched compounds, a quaternary layer is produced in the interfacial region by a method similar to that in the LPE process.…”