Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon

Abstract

In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p-type and n-type compensated Si than in uncompensated Si with the same net doping. The factors influencing incomplete ionization at room-temperature are shown to be the majoritydopant concentration, its ionization energy and type and the compensation level. We show that both the majority-and the minority-carrier mobilities are lower in compensated Si than expected by Klaassen's model and that the discrepancy increases with the compensation level at room-T. The study of the Tdependence of the majority-carrier mobility shows that there is no compensation-specific mechanism and that the reduction of the screening in compensated Si cannot explain alone the observed gap between experimental and theoretical mobility.

Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements

“…Models of carrier mobility in monocrystalline Si are wellestablished and include the effects of doping density, 1,2 injection level, [3][4][5][6] and temperature [7][8][9] on the mobility. However, the effects of compensating dopants and grain boundaries have been less studied [10][11][12][13][14] and there is yet to emerge a coherent model that accounts for these effects. More generally, there is a lack of data regarding the impact of injection level on carrier mobility.…”