2024
DOI: 10.1002/jnm.3201
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Incorporating DC bias voltage in poly‐harmonic distortion modeling for RF power GaN transistors

Shuhao Cheng,
Xiaoqiang Tang,
Zlatica Marinković
et al.

Abstract: This paper presents a novel poly‐harmonic distortion (PHD) model that incorporates the DC input and output bias voltages using Gaussian process regression (GPR). Simulation tests were conducted using a 10‐W gallium nitride (GaN) HEMT transistor from Wolfspeed, and the model implementation test was performed in the Keysight Advanced Design System environment. The results showed that the GPR‐based PHD model exhibited good performance in predicting both fundamental and harmonic behaviors over a wide range of bias… Show more

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