2020
DOI: 10.1088/2053-1591/ab6e37
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Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se2 films: enhancement of photovoltaic performance of fabricated solar cells

Abstract: The morphology and photovoltaic properties of the solution-based Cu(In, Ga)Se 2 films are effectively improved via the incorporation of copper-indium back-end layers in the precursor films. The effects on the concentrations of bimetal-ions solutions to prepare copper-indium back-end layers are investigated in this study. The incorporation of copper-indium back-end layer in the precursor film enhances the internal diffusion between gallium-ions and indium-ions during selenization reaction. Hence, the porous str… Show more

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(1 citation statement)
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“…Namely, cadmium telluride PV cells are formed by cadmium telluride and cadmium sulphide p-n junction materials on a glass substrate [6]. Copper, gallium, indium, and selenide materials are deposited on a substrate layer by a sequence of chemical processes to form copper indium diselenide PV cells [7]. Polycrystalline, monocrystalline, thin film produced by CIS material, and thin film produced by CdTe material are widely used for renewable energy generation since these technologies provide several advantages in terms of price, energy efficiency, and lifetime [8,9].…”
Section: Introductionmentioning
confidence: 99%
“…Namely, cadmium telluride PV cells are formed by cadmium telluride and cadmium sulphide p-n junction materials on a glass substrate [6]. Copper, gallium, indium, and selenide materials are deposited on a substrate layer by a sequence of chemical processes to form copper indium diselenide PV cells [7]. Polycrystalline, monocrystalline, thin film produced by CIS material, and thin film produced by CdTe material are widely used for renewable energy generation since these technologies provide several advantages in terms of price, energy efficiency, and lifetime [8,9].…”
Section: Introductionmentioning
confidence: 99%