Incorporation of Cyano‐Substituted Aromatic Blocks into Naphthalene Diimide‐Based Copolymers: Toward Unipolar n‐Channel Field‐Effect Transistors

Wei, Congyuan; Xu, Pan; Zhang, Weifeng; Zhou, Yankai; Wei, Xuyang; Zheng, Yuanhui; Wang, Liping; Yu, Gui

doi:10.1002/smsc.202100016

Cited by 4 publications

(3 citation statements)

References 35 publications

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“…The two dibrominated electron-accepting monomers f-BTI2g-2Br and f-BSeI2g-2Br, and the distannylated cyanated selenophene-vinylene-selenophene donor comonomer SVSCN-2Sn were prepared according to previously reported procedures by our group and the others. [53,55,56] After a typical Soxhlet extraction process-based purification, the product polymers were obtained and characterized by gel-permeation chromatography (room temperature, chloroform as eluent), showing comparable number-average molecular weights (M n s) and polydispersity indices (PDIs) of 9.1 kDa/1.7 and 8.0 kDa/1.7 for f-BTI2g-SVSCN and f-BSeI2g-SVSCN (Figure S1, Supporting Information), respectively. It is worth noting that the M n s of both selenopheneincorporated polymers are relatively lower compared with those of their all-thiophene-based polymer, f-BTI2g-TVTCN (see structure in Scheme 1, M n /PDI = 28.3 kDa/4.8).…”

Section: Resultsmentioning

confidence: 99%

Selenophene Substitution Enabled High‐Performance n‐Type Polymeric Mixed Ionic‐Electronic Conductors for Organic Electrochemical Transistors and Glucose Sensors

Wu,

Feng,

Wang

et al. 2023

Advanced Materials

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High‐performance n‐type polymeric mixed ionic‐electronic conductors (PMIECs) are essential for realizing organic electrochemical transistors (OECTs)‐based low‐power complementary circuits and biosensors, but their development still remains a great challenge. Herein, by devising two novel n‐type polymers (f‐BTI2g‐SVSCN and f‐BSeI2g‐SVSCN) containing varying selenophene contents together with their thiophene‐based counterpart as the control, we demonstrate that gradually increasing selenophene loading in polymer backbones can simultaneously yield lowered lowest unoccupied molecular orbital (LUMO) levels, boosted charge‐transport properties, and improved ion‐uptake capabilities. Therefore, a remarkable volumetric capacitance (C*) of 387.2 F cm−3 and a state‐of‐the‐art OECT electron mobility (μe,OECT) of 0.48 cm2 V−1 s−1 are synchronously achieved for f‐BSeI2g‐SVSCN having the highest selenophene content, yielding an unprecedented geometry‐normalized transconductance (gm,norm) of 71.4 S cm−1 and record figure of merit (μC*) value of 191.2 F cm−1 V−1 s−1 for n‐type OECTs. Thanks to such excellent performance of f‐BSeI2g‐SVSCN‐based OECTs, a glucose sensor with a remarkably low detection limit of 10 nM and decent selectivity was further implemented, demonstrating the power of selenophene substitution strategy in enabling high‐performance n‐type PMIECs for biosensing applications.This article is protected by copyright. All rights reserved

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Section: Resultsmentioning

confidence: 99%

Selenophene Substitution Enabled High‐Performance n‐Type Polymeric Mixed Ionic‐Electronic Conductors for Organic Electrochemical Transistors and Glucose Sensors

Wu,

Feng,

Wang

et al. 2023

Advanced Materials

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“…8). 125 Yu and co-workers attempted to achieve room-temperature stable MR response in OSVs using ambipolar P61 and P62 . 126 The results revealed that longer alkyl side chains on the NDI unit decreased MR values.…”

Section: Semiconducting Polymers Based On Diarylethylene Unitsmentioning

confidence: 99%

Synthetic strategies, molecular engineering and applications of semiconducting polymers based on diarylethylene units in electronic devices

Zhang

Wang

et al. 2022

J. Mater. Chem. C

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“…These undesirable issues make p-type-only circuits more attractive and it is welcomed to find a unipolar circuit design for OFET-based XOR gates. [36] To address these challenges, we adopted a unipolar-transistorbased XOR gate design and excavated its postfabrication tunability, which is very important for solving the device instability Organic field-effect transistor (OFET)-based circuits require stable device performance. However, OFETs are suffering from process variation and environmental instability, which limits circuit performance.…”

mentioning

confidence: 99%

An OFET‐Based Involutive Logic Circuit with Wide‐Range Threshold Shift Compensability

Yan

Shao

et al. 2022

Adv Elect Materials

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From the perspective of materials and devices, the stability of OFETs can be improved by exploring highly stable materials, [16][17][18][19][20] or introducing encapsulation layers. [21][22][23] From a circuit design point of view, strategies like providing designing redundancy and optimizing circuit layouts are also used. For providing redundancy, Sugiyama et al. minimized the OFET performance variation by fabricating multiple OFETs separately, characterizing them one by one, handpicking the devices needed, and finally connecting them into the circuit. [4] And for layout optimization, Zhang et al. compared several layout techniques and pointed out that a common centroid layout can improve device uniformity at the cost of larger area overhead. [15] These strategies can effectively mitigate process variation; however, once the circuit is fabricated, they are incapable to fight against subsequent performance degradation caused by the environment. Therefore, it is necessary to incorporate postfabrication tunability in circuit design. For inverters and NAND gates, there has been a practical circuit design, namely pseudo-CMOS, [24,25] enabling postfabrication adjustability compensating the above-mentioned variation and instability, while for another important logical operation, namely XOR gates, such kind of design specifically for the OFET-suffered problems have rarely been reported. [26][27][28] To build an OFET-based XOR gate, in addition to the abovementioned key challenges that are to be tackled, another point that needs attention is that the already existing OFET-based XOR gates prefer to adopt the configuration that combines multiple NAND and/or NOR gates. [29][30][31] Although constructing other kinds of logic gates by stacking NAND gates is versatile, the lack of well-designed circuits will not only increase the cost of the number of transistors, but increase signal delay and reduce circuit performance as well. There are indeed ready-made designs in silicon-based electronics that OFETs can use, which are mainly based on pass transistor logic. [32][33][34][35] However, these designs usually require complementary transistors, resulting in less stable performance and more complex fabrication processes owing to the utilization of n-type organic semiconductors. These undesirable issues make p-type-only circuits more attractive and it is welcomed to find a unipolar circuit design for OFET-based XOR gates. [36] To address these challenges, we adopted a unipolar-transistorbased XOR gate design and excavated its postfabrication tunability, which is very important for solving the device instability Organic field-effect transistor (OFET)-based circuits require stable device performance. However, OFETs are suffering from process variation and environmental instability, which limits circuit performance. Here, an optimally designed XOR gate based on p-type-only OFETs is reported. The circuit has excellent postfabrication tunability that is enough to cope with a threshold voltage shift as high as 1.5 V. Moreover, the circui...

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Incorporation of Cyano‐Substituted Aromatic Blocks into Naphthalene Diimide‐Based Copolymers: Toward Unipolar n‐Channel Field‐Effect Transistors

Cited by 4 publications

References 35 publications

Selenophene Substitution Enabled High‐Performance n‐Type Polymeric Mixed Ionic‐Electronic Conductors for Organic Electrochemical Transistors and Glucose Sensors

Selenophene Substitution Enabled High‐Performance n‐Type Polymeric Mixed Ionic‐Electronic Conductors for Organic Electrochemical Transistors and Glucose Sensors

Synthetic strategies, molecular engineering and applications of semiconducting polymers based on diarylethylene units in electronic devices

An OFET‐Based Involutive Logic Circuit with Wide‐Range Threshold Shift Compensability

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