Incorporation of gallium in ZnSiP2

Ziegler, E.; Siegel, W.; Kühnel, G.; Buhrig, E.

doi:10.1002/pssa.2210480152

Cited by 8 publications

(3 citation statements)

References 6 publications

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“…The fundamental properties of ZnSiP 2 have been studied since the late 1950's using crystals that have been grown in a flux (typically Zn or Sn) or by halogen assisted vapor transport. 2,11,12,[19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] Studies of these crystals reveal that ZnSiP 2 has a very small lattice mismatch with Si of 0.5% (Fig. 1), has a band gap of B2.1 eV, forms with minimal atomic disorder, and is structurally stable at temperatures up to 800 1C.…”

Section: Introductionmentioning

confidence: 99%

“…11,12,[33][34][35][36][37][38][39] Doping of ZnSiP 2 has yielded n-type (Se, Te, In, or Ga) and p-type (Cu) crystals. 11,19,20,28,31 Some characterization has been done which is specifically relevant to the applications of tandem PV cells with silicon. Several authors have proposed and discussed the prospects of ZnSiP 2 heterojunctions with Si.…”

Section: Introductionmentioning

confidence: 99%

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Solar energy conversion properties and defect physics of ZnSiP₂

Martinez

Warren

Gorai

et al. 2016

Energy Environ. Sci.

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Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP 2 is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP 2 photovoltaic device. We show that ZnSiP 2 has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP 2 are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP 2 and related materials as photovoltaic absorber materials. Broader ContextOf all the renewable energy technologies, solar photovoltaic electricity has one of the highest resource potentials; there is enough energy in the sunlight incident on the surface of the earth to meet the world's energy demands many times over (∼10,000:1). However, significant market penetration requires photovoltaics to be cost competitive with fossil fuels, even when unsubsidized. Currently, balance of system costs, rather than module costs, represent the majority of the total installed cost. Thus, increasing module efficiency is attractive as high efficiency cells can reduce installation size and therefore cost. Tandem photovoltaic architectures can provide a transformative boost in module efficiency over the single junction alternative due to reduced thermalization losses. Silicon photovoltaics is a well established (>90% market share), high efficiency, low cost technology that provides a crystalline template to grow top cells upon. However, the top cell material must satisfy strict requirements, including high efficiency and long reliability, or its presence will simply reduce the performance of the silicon bottom cell. The primary top cell materials considered to date include III-V materials, but the cost of these materials and their sensitivity to defects have proven challenging. In this work, ZnSiP 2 emerges as a wide band gap absorber that has the potential to meet the requirements needed for a top cell in tandem silicon-based photovoltaics. † Electronic Supplementary Information (ESI) available:

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Solar energy conversion properties and defect physics of ZnSiP₂

Martinez

Warren

Gorai

et al. 2016

Energy Environ. Sci.

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“…G a doped ZnSiP, crystals from the zinc melt show on principle the same picture of homogeneity, only with the distinction that Ga is the dominant donor in the lowresistivity n-type region. This fact is confirmed by a clearly lower activation energy in comparison with undoped samples (ZIEGLER et al 1978). I n the crystalsfrom tin melt the bulk is n-type low-resistivity and rather more homogeneous, except a small region below the (112)A face and thin layers (d 1 : 50pm) immediately below the (101) surfaces.…”

Section: Bulk C F the Crystalsmentioning

confidence: 55%

Orientation dependence of electrical and optical properties of ZnSiP₂ crystals grown from melt

Siegel

Kühnel

Ziegler

et al. 1980

Cryst Res and Technol

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Dedicated to Professor G. BECHERER on the occasion of his 65th birthday Undoped and Ga-doped ZnXiP, crystals grown by spontaneous crystallization from nonstoichiometric melt show a pronounced dependence of electrical properties (conductivity, carrier concentration) and cathodoluminescence on the orientation of various crystal faces. Breakdown voltage meaurements and Hall measurements yielded that the (112)B face is always low-resistivity n-type and the (112)A face is always semi-insulating. The spectral position of the broad luminescence band observed a t 80 K differs in a characteristical manner for the various crystal faces. The luminescence behaviour correlates partly with the electrical properties. The results are explained by an orientation dependence of the impurity incorporation which is reflected also in the bulk properties of the crystals.Undotierte und Ga-dotierte ZnXiP,-Kristalle, die durch spontane Kristallisation aus einer niehtstochiometrischen Schmelze geziichtet wurden, zeigen eine ausgepriigte Abhiingigkeit der elektrischen Eigenschaften (Leitflihigkeit, Ladungstriigerkonzentration) und der Kathodolumineszenz von der Orientierung der verschiedenen Kristallfliichen. Durchbruchsspannungs-und Halleffektmessungen ergaben, dalS die (1 12)B-Fliiche stets niederohmig n-leitend und die (1 12)A-Fliiche stets halbisolierend ist. Die spektrale Lage der bei 80 K beobachteten breiten Lumineszenzbande unterscheidet sich deutlich fur die verschiedenen Kristallfliichen. Das Lumineszenzverhalten korreliert teilweise mit den elektrischen Eigenschaften. Die Ergebnisse werden durch Orientierungsabhiingigkeit des Storstelleneinbaus erkliirt, die sich auch im Kristallinneren iiul3ert.

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The Influence of Intrinsic Defects on the Electrical Properties of Single Crystals of CdSiP2 and ZnGeP2

Sodeika

Silevičius

Januškevičius

et al. 1982

phys. stat. sol. (a)

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It is shown that the electrical properties of undoped single crystals of ZnGeP2 and CdSiP2 are due to their intrinsic defects. Thermal treatment in the vapour of the components or ion implantation allows to obtain a wide range variation both, of the carrier density and polarity. Acceptor defects in ZnGeP2 are caused by zinc vacancies, their energetic position is Ev + 0.72 eV. Acceptor defects in CdSiP2 form level at Ev + 0.45 eV. Predominating donors in CdSiP2 and ZnGeP2 are phosphor vacancies. Their energy position in CdSiP2 is at Ec — 0.63 eV. The influence of germanium on the electrical properties of ZnGeP2 is not revealed, while silicon is amphoterically soluted in CdSiP2.

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Incorporation of gallium in ZnSiP2

Cited by 8 publications

References 6 publications

Solar energy conversion properties and defect physics of ZnSiP₂

Solar energy conversion properties and defect physics of ZnSiP₂

Orientation dependence of electrical and optical properties of ZnSiP₂ crystals grown from melt

The Influence of Intrinsic Defects on the Electrical Properties of Single Crystals of CdSiP2 and ZnGeP2

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Incorporation of gallium in ZnSiP2

Cited by 8 publications

References 6 publications

Solar energy conversion properties and defect physics of ZnSiP2

Solar energy conversion properties and defect physics of ZnSiP2

Orientation dependence of electrical and optical properties of ZnSiP2 crystals grown from melt

The Influence of Intrinsic Defects on the Electrical Properties of Single Crystals of CdSiP2 and ZnGeP2

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Solar energy conversion properties and defect physics of ZnSiP₂

Solar energy conversion properties and defect physics of ZnSiP₂

Orientation dependence of electrical and optical properties of ZnSiP₂ crystals grown from melt