Incorporation of Mg in Free-Standing HVPE GaN Substrates

Zvanut, M. E.; Dashdorj, J.; Freitas, Jaime A.; Glaser, E. R.; Willoughby, William R.; Leach, J. H.; Udwary, K.

doi:10.1007/s11664-016-4413-9

Cited by 14 publications

(3 citation statements)

References 21 publications

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“…Memory effects following the intentional incorporation of iron can also lead to unintentional incorporation of iron in subsequent growth processes [9]. Secondary ion mass spectroscopy (SIMS) on bulk GaN samples grown using hydride vapor phase epitaxy (HVPE) [10,11] revealed the presence of iron incorporated unintentionally at concentrations of 10 15 cm −3 [10]. The unintentional incorporation of iron in these samples was (at least partially) attributed to the Mg source used for p-type doping.…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of iron in GaN, AlN, and InN

et al. 2019

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Iron is a common trace impurity in the group-III nitrides. Iron is also intentionally introduced in III-nitride electronic devices to create semi-insulating substrates and in the context of spintronics and quantum information applications. Despite the wide-ranging consequences of iron's presence in III-nitrides, the properties of iron impurities in the nitrides are not fully established. We investigate the impact of iron impurities on the electrical and optical properties of GaN, AlN, and InN using first-principles calculations based on a hybrid functional. We report formation energies of substitutional and interstitial iron impurities as a function of the Fermi-level position. We also investigate complexes of Fe with substitutional oxygen on the nitrogen site, with nitrogen vacancies and with hydrogen interstitials. In GaN and AlN, iron on the cation site is amphoteric. We discuss the role of the Fe-induced acceptor level and its impact on nonradiative recombination in the context of loss mechanisms in light emitters, and current collapse in high-electron-mobility transistors. In InN, we find the iron interstitial to be the most favorable configuration, where it acts as a shallow double donor.

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Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of iron in GaN, AlN, and InN

et al. 2019

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“…As the HVPE sample cooled after growth, the GaN separated from the substrate due to thermal stress and was polished, resulting in free-standing GaN doped with 3.0 × 10 18 cm −3 Mg. The detailed growth process and additional characterization was described previously [16][17][18][19].…”

Section: Experimental Parametersmentioning

confidence: 99%

Small non-uniform basal crystal fields in HVPE free-standing GaN:Mg as evidenced by angular dependent and frequency-dependent EPR

Sunay

Zvanut

Marbey

et al. 2019

J. Phys.: Condens. Matter

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We studied thin-film and free-standing Mg-doped GaN using multi-frequency electron paramagnetic resonance (EPR) at 3–3.5 K and 9.4–130 GHz. Free-standing samples exhibit a highly anisotropic intensity, varying by a factor of 20 from 0° to 60°. In contrast, the intensity of the thin-film samples is significantly more isotropic, varying by no more than 10% over the same range of angles. The angular dependent intensity can be modeled in both free-standing and thin-film samples similarly to the g-factor anisotropy reported for thin films, supporting the theoretical predictions that the hole is on a basal site around the Mg acceptor. In addition, frequency-dependent transmission EPR measurements reveal a distribution of in free-standing samples, indicating that the local basal crystal field is non-uniform.

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“…[12,21,22] The electrical properties of GaN are mainly controlled by in situ doping during the growth. Shallow donors (Si [23,24] and Ge [25,26] ), shallow acceptors (Mg), [27] and deep level impurities (Fe [28,29] and C [30,31] ) generally serve as the dopants to achieve N-type, P-type, and semi-insulating electrical characteristic of GaN, respectively.…”

Section: Introductionmentioning

confidence: 99%

Growth and doping of bulk GaN by hydride vapor phase epitaxy*

Wang

Cai²,

Ren

et al. 2020

Chinese Phys. B

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Doping is essential in the growth of bulk GaN substrates, which could help control the electrical properties to meet the requirements of various types of GaN-based devices. The progresses in the growth of undoped, Si-doped, Ge-doped, Fe-doped, and highly pure GaN by hydride vapor phase epitaxy (HVPE) are reviewed in this article. The growth technology and precursors of each type of doping are introduced. Besides, the influence of doping on the optical and electrical properties of GaN are presented in detail. Furthermore, the problems caused by doping, as well as the methods to solve them are also discussed. At last, highly pure GaN is briefly introduced, which points out a new way to realize high-purity semi-insulating (HPSI) GaN.

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Incorporation of Mg in Free-Standing HVPE GaN Substrates

Cited by 14 publications

References 21 publications

Electrical and optical properties of iron in GaN, AlN, and InN

Electrical and optical properties of iron in GaN, AlN, and InN

Small non-uniform basal crystal fields in HVPE free-standing GaN:Mg as evidenced by angular dependent and frequency-dependent EPR

Growth and doping of bulk GaN by hydride vapor phase epitaxy*

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