Incorporation of nitrogen in GaAsN and InGaAsN alloys investigated by FTIR and NRA

Alt, H. Ch.; Egorov, A. Yu.; Riechert, H.; Meyer, J.D.; Wiedemann, B.

doi:10.1016/s0921-4526(01)00932-2

Cited by 30 publications

(20 citation statements)

References 23 publications

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“…Full details of the growth procedures used can be found elsewhere [6,7]. All the samples were grown at ~800 °C, where our previous studies have shown a strong blue PL signal for As-doped GaN [5,6]. An As 2 flux of ~4 × 10 -6 mbar (Beam Equivalent Pressure, BEP), Ga flux of ~8 × 10 -7 mbar (BEP) and nitrogen flux of ~2 × 10 -5 mbar (BEP) were used.…”

Section: Methodsmentioning

confidence: 99%

“…Furthermore, with the addition of In, epitaxial layers of GaInAsN lattice matched to GaAs can be fabricated [2]. N-doped GaAs has been extensively studied in the past few years [3][4][5], but much less attention has been focussed on As-doped GaN. Recently, a strong blue emission (2.6 eV) at room temperature from As-doped GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE) has been demonstrated [6].…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence from self‐assembled GaAs inclusions embedded in a GaN host crystal

Andrianov

Новиков

et al. 2003

Physica Status Solidi (b)

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We report on observation of photoluminescence in 1.2-1.4 eV spectral range from As-doped GaN layers grown by plasma-assisted molecular beam epitaxy. We attribute this emission to recombination in GaAs inclusions formed during the growth process in the GaN(As) layers. This near-infrared emission is efficient under UV photoexcitation, but its intensity is low for excitation energies below the band gap of GaN. Low-temperature photoluminescence spectra reveal a set of sharp emission lines with maxima from 1.516 eV to 1.436 eV. We attribute some of these sharp lines to the emission of excitons bound to nitrogen incorporated into the GaAs crystallites and also to their GaAs-like optical phonon replicas. Photoluminescence excitation spectra show a series of maxima, which can be attributed to the formation of bound and free excitons and also to the formation of excitons with the simultaneous emission of GaAs-like optical phonons.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoluminescence from self‐assembled GaAs inclusions embedded in a GaN host crystal

Andrianov

Новиков

et al. 2003

Physica Status Solidi (b)

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“…For GaAsN alloys, the electron mobility and optical emission intensity decrease as the nitrogen incorporation increases. 4-6 However, conflicting results have been reported regarding the mechanism of N incorporation in GaAsN, [7][8][9][10][11] and the relationship between the mechanism of N incorporation and the GaAsN surface reconstruction has not been reported.…”

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confidence: 99%

Mechanisms of nitrogen incorporation in GaAsN alloys

Reason

McKay

et al. 2004

Applied Physics Letters

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We have investigated nitrogen incorporation mechanisms in dilute nitride GaAsN alloys grown by plasma-assisted molecular-beam epitaxy. A comparison of nuclear reaction analysis and Rutherford backscattering spectrometry in channeling and nonchanneling conditions reveals significant composition-dependent incorporation of N into nonsubstitutional sites, presumably as either N -N or N -As split interstitials. Furthermore, we identify the ͑2 ϫ 1͒ reconstruction as the surface structure which leads to the highest substitutional N incorporation, likely due to the high number of group V sites per unit area available for N -As surface exchange.

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“…10,29 However, there is some ambiguity in the assignment of this band because it is usually revealed in difference spectra, and there are strong second-order optical modes from the InAs matrix in this frequency range. In order to confirm the origin of this feature, we performed FIR reflectivity measurements on InAsN/GaAs epilayers grown by MBE.…”

Section: Vibrational Spectroscopiesmentioning

confidence: 99%

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

Ibáñez

Oliva

Mare

et al. 2010

Journal of Applied Physics

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We perform a structural and optical characterization of InAs 1−x N x epilayers grown by molecular beam epitaxy on InAs substrates ͑x Շ 2.2%͒. High-resolution x-ray diffraction ͑HRXRD͒ is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ͑ToF-SIMS͒ measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing ͑BAC͒ model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C NM = 2.0Ϯ 0.1 eV.

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Incorporation of nitrogen in GaAsN and InGaAsN alloys investigated by FTIR and NRA

Cited by 30 publications

References 23 publications

Photoluminescence from self‐assembled GaAs inclusions embedded in a GaN host crystal

Photoluminescence from self‐assembled GaAs inclusions embedded in a GaN host crystal

Mechanisms of nitrogen incorporation in GaAsN alloys

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

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