2017
DOI: 10.7567/jjap.56.04cj02
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Incorporation of yttrium to yttrium iron garnet thin films fabricated by mist CVD

Abstract: Yttrium iron garnet (YIG) thin films were deposited on c-plane sapphire substrates under atmospheric pressure by a mist CVD technique, and their chemical composition and optical properties were examined. The thin films deposited at 450 °C showed an [Y]/[Fe] ratio of 0.57, indicating the deposition of yttrium iron oxide, while the molar ratio of [Y]/[Fe] in the precursor solution was set at 1.5. A thermodynamic model was developed to explain the reaction paths of the YIG thin film fabrication process using ther… Show more

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Cited by 5 publications
(7 citation statements)
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“…[14][15][16][17][18] As reported in some of the literature, the 2 nd and 3 rd generation mist CVD has been used to fabricate several metal oxide lms. [19][20][21][22][23] Moreover, in contrast to previous research, which improved the lm conductivity by optimizing doping ratio and/or increasing growth temperature, we used several liquid materials to support the fabrication process. These liquid materials are called "supporting solution", as they are different from the catalysts and react with the precursors in the reactor.…”
Section: Introductionmentioning
confidence: 99%
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“…[14][15][16][17][18] As reported in some of the literature, the 2 nd and 3 rd generation mist CVD has been used to fabricate several metal oxide lms. [19][20][21][22][23] Moreover, in contrast to previous research, which improved the lm conductivity by optimizing doping ratio and/or increasing growth temperature, we used several liquid materials to support the fabrication process. These liquid materials are called "supporting solution", as they are different from the catalysts and react with the precursors in the reactor.…”
Section: Introductionmentioning
confidence: 99%
“…14–18 As reported in some of the literature, the 2 nd and 3 rd generation mist CVD has been used to fabricate several metal oxide films. 19–23…”
Section: Introductionmentioning
confidence: 99%
“…[5] In addition, Y 2 O 3 is also a constituent of several multicomponent materials, such as the ferromagnet yttrium iron garnet (YIG) and the high-temperature superconductor yttrium barium copper oxide (YBCO). [6,7] Therefore, the study on fabrication of high-quality Y 2 O 3 would be beneficial to the growth of yttrium-oxide-related multicomponent materials. According to previous works, Y 2 O 3 thin films are prepared by not only nonequilibrium reaction processes, for instance, electron-beam deposition and pulsed-laser deposition, [8,9] but also equilibrium ones, such as metal-organic chemical vapor deposition and atomic layer deposition.…”
Section: Introductionmentioning
confidence: 99%
“…Mist chemical vapor deposition (mist CVD), which has a similar thin film fabrication process with spray technique and aerosol-assisted CVD (AACVD), has been used to fabricate several metal oxide films. [6,[15][16][17][18] This system, especially the second and third generation with fine channel type (FC) reactor, provides excellent control over the mist flow for fabricating uniform and high-quality thin films on large-area substrate under atmospheric pressure. This precise control of mist flow, which makes mist CVD different from spray and AACVD techniques, is achieved by two physical effects: the existence of Leidenfrost state droplets (ELSD) and the low probability of collisions between mist droplets (LPCD).…”
Section: Introductionmentioning
confidence: 99%
“…For example, indium-galliumnitride (InGaN) and indium-gallium-arsenide-phosphide (InGaAsP) films are a suitable material for light-emitting diodes, strontium-titanate (SrTiO 3 ) and yttrium-iron-garnet (YIG) films are suitable for spintronic device applications, and copper-zinc-tin-sulfide (CZTS) and copper-indium-gallium-selenide (CIGS) films are promising materials for solarcell applications. [1][2][3][4][5][6] The precise control of multi-components film composition is one of the most important requirements in a thin film fabrication process, which will affect the ultimately design structure and performance of the corresponding devices. The technique for film composition control differs depending on the film growth methods.…”
Section: Introductionmentioning
confidence: 99%