Increase in current density at 25-nm-wide emitter for InP hot-electron transistors without base layer

Miyamoto, Yasuyuki; Kashima, Issei; Suwa, Akira; Furuya, Kazuhito

doi:10.1109/drc.2006.305057

2006 64th Device Research Conference 2006

DOI: 10.1109/drc.2006.305057

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Increase in current density at 25-nm-wide emitter for InP hot-electron transistors without base layer

Yasuyuki Miyamoto

Issei Kashima

Akira Suwa

et al.

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Increase in current density at 25-nm-wide emitter for InP hot-electron transistors without base layer

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References 2 publications

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