Increase in silicon film deposition rate in a SiHCl3-SiHx-H2 system

Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH2Cl2 and SiH3CH3 gases

“…As shown in Fig. 3, while the epitaxial growth rate by the SiH2Cl2 increased with the increasing SiH2Cl2 gas concentration, it saturated at 0.2 µm/min, which was the same rate as that saturated at 850 o C using the SiHCl3-H2 system in our previous study [6,8]. The saturation behavior is explained by that predicted by equation (7).…”

“…For this purpose, silicon hydride, SiHx, was found to help overcome the growth rate saturation in the SiHCl3-H2 system, as reported in previous studies [6][7][8]. The mechanism was explained by the Langmuir processes, which were multiple and parallel at the surface.…”

Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

“…The QCM frequency was obtained by the controller and was recorded by a personal computer. The QCM is expected to obtain the significantly weak information [14][15][16] related to the silicon epitaxial growth process such as the gas property change and the byproduct deposition. Although the measurement at the exhaust might contain the results by various processes in the reactor, the major trend was expected to be obtained even from the scattering data.…”

“…For this purpose, a piezoelectric crystal microbalance, such as a quartz crystal microbalance (QCM) and a langasite crystal microbalance [11][12][13][14][15][16][17][18], may be a candidate, because it can sensitively detect the significantly weak signals such as the change in the gas properties and the increase in the nano-gram-level weight of the thin film formed at the surface. Previous studies [14][15][16][17] have reported that the deposition of the byproducts of (SiCl2)n, from the trichlorosilane gas could be in situ measured by the QCM. The byproduct formation and deposition measured by such sensors should be evaluated as to whether they have a relationship with the epitaxial growth rate.…”

Boron-Silicon Film Chemical Vapor Deposition Using Boron Trichloride, Dichlorosilane and Monomethylsilane Gases

“…For this purpose, the deposition rate should be taken into account. In recent reports, [21][22][23][24] the parallel Langmuir process has been studied for increasing the surface reaction rate exceeding the highest limit determined by the Langmuir-type rate theory, which contained the reaction concept of mixed precursors by Hartman et al 25,26 In this model, a silicon hydride and hydrogen were assumed to simultaneously react with the intermediate surface species, SiCl 2 . Because this reaction effectively produces the hydrogen chloride gas to remove the chlorine atoms from the surface, the silicon deposition rate can be high even at the low temperatures.…”