Increase of the Photoluminescence Intensity of InP Nanowires by Photoassisted Surface Passivation

Vugt, Lambert K. van; Veen, Sandra J.; Bakkers, Erik P. A. M.; Roest, and Aarnoud L.; Vanmaekelbergh, Daniël

doi:10.1021/ja051860o

Cited by 96 publications

(85 citation statements)

References 25 publications

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“…[20][21][22] As described above, the InP quantum wires as-synthesized gave no detectable room-temperature PL. We attempted to enhance the PL using the HF-etching method first described by Mićić, Nozik, and coworkers.…”

Section: Discussionmentioning

confidence: 85%

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Spectroscopic Properties of Colloidal Indium Phosphide Quantum Wires

et al. 2007

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Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to other experimental results for InP quantum dots and wires, and to the predictions of theory. The photoluminescence behavior of the wires is also investigated. Efforts to enhance photoluminescence efficiencies through photochemical etching in the presence of HF result only in photochemical thinning or photo-oxidation, without a significant influence on quantum-wire photoluminescence. However, photo-oxidation produces residual dot and rod domains within the wires, which are luminescent. The results establish that the quantum-wire band gaps are weakly influenced by the nature of the surface passivation, and that colloidal quantum wires have intrinsically low photoluminescence efficiencies. † Current address: Stanford

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Section: Discussionmentioning

confidence: 85%

“…[20][21][22] We have recently advanced a rudimentary physical model suggesting how the confinement effects in dots, wells, and wires should compare, 14 but this model has not been thoroughly experimentally tested.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Properties of Colloidal Indium Phosphide Quantum Wires

et al. 2007

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“…These results are in agreement with previous reports about InP surface passivation using HF containing solutions. 9,10 As the band gap energy for bulk InP at 9 and 293 K is 1.42 and 1.35 eV, 11 respectively, the as-grown nanowire emission is blueshifted by about 20 and 30 meV at 9 and 293 K, respectively. For the HF treated nanowires the blueshifts are 10 and 30 meV, respectively.…”

Section: Enhanced Luminescence From Catalyst-free Grown Inp Nanowiresmentioning

confidence: 99%

Enhanced luminescence from catalyst-free grown InP nanowires

Mattila¹,

Hakkarainen²,

Lipsanen³

et al. 2007

Applied Physics Letters

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The surface effects in the optical properties of catalyst-free grown InP nanowires are investigated. Both as-grown nanowires and nanowires treated with hydrofluoric acid are studied using low- and room-temperature continuous-wave and time-resolved photoluminescence measurements and transmission electron microscopy. It is shown that the room-temperature photoluminescence intensity is increased by two orders of magnitude after the surface treatment, and that there is also a significant increase in the double-exponential photoluminescence decay time.

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“…Such relatively large linewidths in NW spectra are attributed to inhomogeneous surface charges. 15,16 A representative result of the measurements on p-InP NWs is shown in Fig. 1͑c͒.…”

Section: Large Redshift In Photoluminescence Of P-dopedmentioning

confidence: 99%

Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning

Weert¹,

Wunnicke²,

Roest³

et al. 2006

Applied Physics Letters

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We have studied the effect of impurity doping on the optical properties of indium phosphide (InP) nanowires. Photoluminescence measurements have been performed on individual nanowires at low temperatures (5–70 K) and at low excitation intensities (0.5–10W∕cm2). We show that the observed redshift (200 meV) and the linewidth (70 meV) of the emission of p-type InP wires are a result of a built-in electric field in the nanowires. This bandbending is induced by Fermi-level pinning at the nanowire surface. Upon increasing the excitation intensity, the typical emission from these p-InP wires blueshifts with 70meV∕decade, due to a reduction of the bandbending induced by an increase in the carrier concentration. For intrinsic and n-type nanowires, we found several impurity-related emission lines.

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Increase of the Photoluminescence Intensity of InP Nanowires by Photoassisted Surface Passivation

Cited by 96 publications

References 25 publications

Spectroscopic Properties of Colloidal Indium Phosphide Quantum Wires

Spectroscopic Properties of Colloidal Indium Phosphide Quantum Wires

Enhanced luminescence from catalyst-free grown InP nanowires

Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning

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