Abstract:Near infrared hyperspectral photoluminescence imaging of crystalline silicon wafers can reveal new knowledge
on the spatial distribution and the spectral response of radiative recombination active defects in the material. The
hyperspectral camera applied for this imaging technique is subject to background shot noise as well as to oscillating
background noise caused by temperature fluctuations in the camera chip. Standard background noise subtraction methods
do not compensate for this oscillation. Many of the … Show more
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