Incubation Time during Chemical Vapor Deposition of Si onto SiO<sub>2</sub> from Silane

Kajikawa, Yuya; Tsuchiya, Toshihiro; Noda, Suguru; Komiyama, Hiroshi

doi:10.1002/cvde.200304165

Cited by 23 publications

(16 citation statements)

References 37 publications

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“…Once the thin film had fully covered the SiO 2 substrate, the reaction became faster on the resultant Ge surface and the grains began to grow. 21 In strong contrast to previous reports with other CVD systems, [11][12][13]19,20 our results suggest that HDPCVD can achieve the Ge deposition on the SiO 2 substrates with nearly no incubation time. This might be due to the fact that the high density of H ions will slightly etch the SiO 2 surface and partially reduce SiO 2 into Si or SiO x .…”

contrasting

confidence: 76%

Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Yang

Shieh

Hsu

et al. 2005

Electrochemical and Solid-State Letters

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Pure and high-quality polycrystalline Ge films have been deposited directly onto fully SiO 2 covered substrates by high-density plasma chemical vapor deposition ͑HDPCVD͒ system. Only a tiny amount of O and C near the surface has been observed from X-ray photoelectron spectroscopy and Auger electron spectroscopy data, which may come from surface oxidation and contamination. Very pure Ge composition has been achieved in the bulk of the films. The cubic structure with primarily ͑111͒, ͑220͒, and ͑311͒ orientations of the Ge films is mainly composed of fine grains and can be unambiguously identified from X-ray diffraction patterns. Furthermore, successful Ge film depositions with nearly no incubation time are demonstrated using a mixture of GeH 4 /H 2 as process gas at 400°C. Thickness vs. time analysis was performed by high-resolution transmission electron microscopy. The HDPCVD technique used was able to provide a simple, powerful, and reliable approach in the fabrication of polycrystalline Ge thin film transistors.Ge has attracted more and more attention due to its wide applications in ultralarge scale integration ͑ULSI͒ and booming nanotechnologies. Ge/Si and SiGe/Si heterostructures have been used in high-performance devices because of their higher electron and hole mobility compared to Si. 1-5 Three-dimensional Ge islands formed on Si surfaces by solid-phase epitaxy technique have also been demonstrated to have great potential in the fabrication of nanostructures. 6 In addition, Ge-on-insulators ͑GOI͒ is especially desired for achieving extremely high performance metal oxide silicon field-effect transistors ͑MOSFET͒ with sufficiently low leakage current. 7,8 However, for thin film transistor ͑TFT͒ applications, successful Ge thin film deposition on SiO 2 substrates using chemical vapor deposition ͑CVD͒ techniques has not been demonstrated so far due to the extremely long incubation times needed. [9][10][11][12][13][14][15] In the present study, we demonstrate the deposition of polycrystalline Ge films directly onto fully SiO 2 covered Si substrates with nearly no incubation time by using high-density plasma CVD ͑HD-PCVD͒ technique at 400°C. X-ray photoelectron spectroscopy ͑XPS͒ and Auger electron spectroscopy ͑AES͒ analyses show that the deposition of very pure Ge thin films can be achieved without significantly detectable O and C incorporations. X-ray diffraction ͑XRD͒ patterns clearly illustrate that the deposited Ge films are of cubic structure with primarily ͑111͒, ͑220͒, and ͑311͒ orientations, respectively, and are mainly composed of small grains with sizes around 14 nm calculated from full width at half-maximum ͑fwhm͒. Moreover, the results of high-resolution transmission electron microscopy ͑HRTEM͒ analysis firmly show that only very short incubation time is needed for the deposition. Because CVD has the advantage of uniformity control over other techniques such as sputtering 16 and e-gun deposition, 17,18 which is highly important in mass production, this technique, therefore, provides a simple, power...

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confidence: 76%

Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Yang

Shieh

Hsu

et al. 2005

Electrochemical and Solid-State Letters

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“…It decreases almost linearly to 3 min at 350°C and is stabilized at this value for higher deposition temperature. This behavior is attributed either to the difference in the sticking coefficients on the substrate and on the film nuclei which are already present on the surface, or to the desorption of the adsorbents [22]. The observed continuous decrease of the nucleation delay with the increase of the deposition temperature in low to moderate temperature range followed by stabilization at high deposition temperature was also observed in the case of CVD of Si [23].…”

Section: Resultsmentioning

confidence: 63%

Experimental and computational investigation of chemical vapor deposition of Cu from Cu amidinate

Aviziotis

Cheimarios

Vahlas

et al. 2013

Surface and Coatings Technology

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International audienceExperiments and computations are performed for the CuMOCVD fromcopper(I) N,N′-di-isopropylacetamidinate [Cu(iPr–Me–amd)]2 or [Cu(amd)]2 where amd = CH(CH3)2NC(CH3)NCH(CH3)2. The a priori choice of this precursor is dictated mainly by its oxygen and halogen–free ligands allowing co-deposition with oxophilic elements such as Al and by its ability to provide conformal Cu films in atomic layer deposition processes. The nucleation delay and the deposition rate as a function of deposition temperature and the evolution of the deposition rate along the radius of the substrate holder are experimentally determined with depositions performed at 1333 Pa in a vertical, warm wall, MOCVD reactor. With the aim to propose a kinetic scenario for Cu deposition, based on recently published experimental results for the decomposition of [Cu(amd)]2, a predictive 3D model of the process is built, based on the mass, momentum, energy and species transport equations. In agreement with the previously mentioned experimental results, it is demonstrated that a single surface reaction is responsible for the deposition of Cu. Two surface kinetics expressions are implemented depending on the deposition regime; a simple Arrhenius type expression in the reaction limited regime and a Langmuir–Hinshelwood type expression prevailing in the transport limited regimewhich takes into account the inhibition effects. The two different kinetics designate a modification in the surface reaction mechanism. The results show good agreement between experiments and computations. Complementary computations are performed, in order to compare the deposition rates of the Cu films deposited via the [Cu(amd)]2 and the (hfac)Cu(VTMS) and Cu(hfac)2 so as to determine relative advantages and disadvantages of Cu MOCVD from [Cu(amd)]2

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“…It is possible to distinguish two extreme cases: (i) if the direct impingement term dominates the deposition process (η 1 ≫ η 2 ), then the growth rate turns out to be directly proportional to the surface coverage θ; (ii) if group III species adsorbing nearby GaAs nanoislands appreciably contribute, g r will instead more rapidly (i.e., for θ ≪ 1) approach the growth rate of a continuous film, namely ν GaAs Fη 1 f, which corresponds to a nonlinear dependence on the surface coverage θ (see inset of Figure 7). 31 Therefore, the main mechanism controlling the GaAs growth dynamics onto Si can be clearly identified by evaluating the experimental growth rate g r as a function of surface coverage.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Shape, Size Evolution, and Nucleation Mechanisms of GaAs Nanoislands Grown on (111)Si by Low-Temperature Metal–Organic Vapor-Phase Epitaxy

Miccoli

Prete

Lovergine

2019

Crystal Growth & Design

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The shape, size evolution, and nucleation mechanisms of GaAs nanoislands grown at 400 °C on As-stabilized (111)Si by metal–organic vapor phase epitaxy are reported for the first time. GaAs crystallizes in the zincblende phase in the very early nucleation stages until a continuous epilayer is formed. GaAs nanoislands grow (111)-oriented on Si as truncated hexagonal pyramids, bound by six equivalent {120} side facets and a (111) facet at the top. Their diameter and height appear to increase linearly with the deposition time, yielding a constant aspect ratio of ∼1/4. The nanoisland density (before coalescence) stays constant with time at ∼2 × 1010 cm–2, suggesting that the nucleation occurs at specific Si surface sites (defects) during the very early growth stages, rather than being due to the continuous formation of new nuclei. To understand the molecular-level mechanisms driving the low-temperature MOVPE growth of GaAs on Si, we applied a deposition–diffusion–aggregation (DDA) nucleation model, which predicts a linear evolution of the overall GaAs growth rate with surface coverage, in good agreement with experimental observations, under the assumption that direct impingement of trimethylgallium (Me3Ga) molecules onto the nanoisland surface dominates the material nucleation and growth rate; the contribution of Me3Ga adsorbed onto the As-stabilized (111)Si is negligible, pointing out the reduced reactivity of the Si surface (As passivation). Our DDA model allows estimation of the effective reactive sticking coefficient of Me3Ga onto GaAs, which is equal to 2.82 × 10–5: the small value is compatible with the Me3Ga large steric hindrance and the competitive role of methyl radicals in surface adsorption at low temperature.

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Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane

Cited by 23 publications

References 37 publications

Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Experimental and computational investigation of chemical vapor deposition of Cu from Cu amidinate

Shape, Size Evolution, and Nucleation Mechanisms of GaAs Nanoislands Grown on (111)Si by Low-Temperature Metal–Organic Vapor-Phase Epitaxy

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Incubation Time during Chemical Vapor Deposition of Si onto SiO2 from Silane

Cited by 23 publications

References 37 publications

Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Low-Temperature Growth of Polycrystalline Ge Films on SiO2 Substrate by HDPCVD

Experimental and computational investigation of chemical vapor deposition of Cu from Cu amidinate

Shape, Size Evolution, and Nucleation Mechanisms of GaAs Nanoislands Grown on (111)Si by Low-Temperature Metal–Organic Vapor-Phase Epitaxy

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Incubation Time during Chemical Vapor Deposition of Si onto SiO₂ from Silane