Indashsitu X-ray reflectivity investigation of growth and surface morphology evolution during Fe chemical vapor deposition on Si(001)

Activation of SiC Surfaces for Vapor Phase Lubrication by Chemical Vapor Deposition of Fe

“…However, the nucleation rate increases with increasing substrate temperature in the range 388-483 K, giving a higher density of stable nuclei, resulting in smaller island sizes and a smoother steady-state surface morphology. Previous STM and X-ray reflectivity measurements have shown that the average cluster density increases with increasing substrate temperature [31,33]. The deposition temperature of 600 K used in this work may result in small dense clusters distributed across the surface.…”

“…Although Fe film growth has not been studied on SiC surfaces it has been studied on Si. Fe films grown to thicknesses of a few monolayers on clean Si(100) substrates exhibit island growth at low coverages followed by coalescence into a continuous film at high coverages [31][32][33][34][35]. In the study of the initial stages of Fe CVD onto Si(100), its morphology is characterized by formation of small clusters.…”

Study on the Si penetration into Fe sheets using PVD method and its application in the fabrication of Fe-6.5wt.% Si alloys

“…Except for a slight decline at 200°C, the deposition rate increases with the increase of substrate temperature for the Si and FeSi films. This results from easier transfer of deposited atoms with higher substrate temperatures [13][14][15][16]. Note that the deposition rate for the FeSi film is larger and more sensitive to the substrate temperature as compared to the Si film.…”

Fixed-angle, energy-dispersive x-ray reflectivity measurement of thin tantalum film thickness

“…The fixed angles in the energy-dispersive, reflectivity technique are ideal for in-situ configurations, as seen studying H bombardment damage on SiO 2 by Chason et al 13 and chemical-vapor deposition of iron by Kellerman et al 14 The technique has also been used for in-situ liquid systems by Roser et al 15 and in high-precision ex-situ liquid samples and thin tantalum films. 16 Previous work with fixedangle, energy-dispersive x-ray reflectivity has involved using a high-voltage (high-power) source, for example, a 150-kV tungsten source 11 or a 40-kV rotating-anode molybdenum source.…”

“…16 Previous work with fixedangle, energy-dispersive x-ray reflectivity has involved using a high-voltage (high-power) source, for example, a 150-kV tungsten source 11 or a 40-kV rotating-anode molybdenum source. 13,14 The wide spectrum reproduces an entire x-ray reflectivity pattern with a large energy-range Ge-type detector or a smaller-range, Si-type detector coupled to a multichannel analyzer collecting the energy-dispersive data. In the present work, we show that it is possible to use lower voltage sources, copper or chromium, operating at 20 kV, to produce only the needed region of the reflectivity spectrum to obtain the thickness or density information.…”