Indentation analysis of elastic and plastic deformation of precursor-derived Si–C–N ceramics

Janakiraman, Narayanan; Aldinger, Fritz

doi:10.1016/j.jeurceramsoc.2009.09.006

Cited by 50 publications

(62 citation statements)

References 33 publications

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“…Ceramics based upon polymer-derived silicon carbonitride (Si-C-N) have attracted great interest for structural applications due to their low density, high hardness and elastic modulus, extraordinary chemical stability, and high creep resistance at elevated temperatures [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Mechanical and electrical properties of polymer-derived Si–C–N ceramics reinforced by octadecylamine – Modified single-wall carbon nanotubes

Shopova-Gospodinova

Burghard

Dufaux

et al. 2011

Composites Science and Technology

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Please cite this article as: Shopova-Gospodinova, D., Burghard, Z., Dufaux, T., Burghard, M., Bill, J., Mechanical and electrical properties of polymer-derived Si-C-N ceramics reinforced by octadecylamine -modified single-wall carbon nanotubes, Composites Science and Technology (2011), doi: 10.1016/j.compscitech.2011 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.-1 - Polymer-derived Si-C-N ceramics reinforced by homogeneously distributed octadecylaminefunctionalized single-walled carbon nanotubes (SWCNTs) were synthesized using a casting process, successive pressureless cross-linking and thermolysis. We find that the incorporation of even small amounts of modified SWCNTs leads to a remarkable improvement of mechanical and electrical transport properties of our composites. In particular, we find twofold enhancement of fracture toughness. The Youngs modulus and the hardness show increase by ~ 30 and 15 %, respectively. Furthermore, the electrical conductivity was found to increase more than five orders of magnitude even for a tube content of 0.5 wt%.

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Section: Introductionmentioning

confidence: 99%

Mechanical and electrical properties of polymer-derived Si–C–N ceramics reinforced by octadecylamine – Modified single-wall carbon nanotubes

Shopova-Gospodinova

Burghard

Dufaux

et al. 2011

Composites Science and Technology

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“…It has been shown that volumetric densification promotes strain hardening in vitreous silica under both indentation and diamondanvil compression experiments, [148]. The microindentation experiments on the present materials in the amorphous state reveal a reduction of indentation hardness under increasing applied loads, indicating densification-assisted strain softening of these materials, [148].…”

Section: (A) (B)mentioning

confidence: 74%

“…SiC-based, [146][147][148]. During such studies, the size of the indenter (owing to indentation size effect-ISE) and the grain size of the polycrystalline materials have been shown to strongly affect the indentation creep response of materials.…”

Section: Temperature=1600 O C and α=05mentioning

confidence: 99%

Computer Aided Multi-scale Design of SiC-Si3N4 Nanoceramic Composites for High-Temperature Structural Applications

Tomer¹,

Renaud²

2010

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“…As a result, the plastically deformed region was often hardened. Increased hardness value and elastic modulus are often suggestive of a densification mechanism present in the tested amorphous films under indentation stress [33,34]. It is thus likely that in this case cyclic loading generated more pronounced localized densification in the amorphous SiN films than monotonic-loading indentation, which thus resulted in the increased values of H and E (Fig.…”

Section: Accepted M Manuscriptmentioning

confidence: 92%

Interfacial energy release rates of SiN/GaAs film/substrate systems determined using a cyclic loading dual-indentation method

Huang

2015

Thin Solid Films

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Please cite this article as: Mingyuan Lu, Han Huang, Interfacial energy release rates of SiN/GaAs film/substrate systems determined using a cyclic loading dual-indentation method, Thin Solid Films (2015Films ( ), doi: 10.1016Films ( /j.tsf.2015 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT AbstractOur previous study developed a dual-indentation method for testing the interfacial energy release rate, G in , of the SiN/GaAs film/substrate systems. However, for the film/substrate systems with relatively high interfacial toughness, the dual-indentation method was unable to generate interfacial delamination. In this study, a cyclic loading dual-indentation method was proposed, in which the first monotonic loading in the dual-indentation method was replaced by cyclic loading. It was demonstrated that cyclic loading was effective at inducing delamination in relatively "tough" SiN/GaAs interfaces that were unable to be delaminated by dual-indentation method. The G in values obtained from the cyclic loading indentation were in good agreement with those obtained from the dual-indentation method for the less tough interfaces. The delamination mechanism in the cyclic loading indentation was attributed to the hardening effect on the films induced by cyclic loading, permitting sufficient elastic strain energy to be accumulated to initiate the delamination.Key words: Nanoindentation; delamination; cyclic loading; energy release rate A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT IntroductionThe assessment of the adhesion properties of a thin film is imperative to ensure the reliability of the film/substrate system over its life cycles [1]. As a consequence, there is an increasing demand for developing reliable techniques to measure the interfacial adhesion between a film and a substrate. In the past few decades, significant research effort has been directed towards developing approaches to evaluate the adhesion property [1][2][3][4][5][6][7]. Among the available techniques, indentation enables the investigation of interfacial adhesion of a film/substrate system to be undertaken in a controllable manner by generating interfacial cracks on a sufficiently small scale and at a specific site [8].In our previous work, a dual-indentation method was developed to assess the interfacial adhesion of SiN/GaAs film/substrate systems [9]. This method was successfully applied to the SiN/GaAs film/substrate systems with different interfacial properties. The limitation of the dual-indentation approach was that interfacial delamination must be induced during the first ...

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Indentation analysis of elastic and plastic deformation of precursor-derived Si–C–N ceramics

Cited by 50 publications

References 33 publications

Mechanical and electrical properties of polymer-derived Si–C–N ceramics reinforced by octadecylamine – Modified single-wall carbon nanotubes

Mechanical and electrical properties of polymer-derived Si–C–N ceramics reinforced by octadecylamine – Modified single-wall carbon nanotubes

Computer Aided Multi-scale Design of SiC-Si3N4 Nanoceramic Composites for High-Temperature Structural Applications

Interfacial energy release rates of SiN/GaAs film/substrate systems determined using a cyclic loading dual-indentation method

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