Independent chemical/physical role of combustive exothermic heat in solution-processed metal oxide semiconductors for thin-film transistors

Kim, Seong Jip; Song, Ae Ran; Lee, Su Yeon; Nahm, Sahn; Choi, Youngmin; Chung, Kwun Bum; Jeong, Sunho

doi:10.1039/c4tc02408g

Cited by 21 publications

(13 citation statements)

References 38 publications

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“…Figure 7(a) shows the real refractive index (R-value) derived from the SE spectra, which indicates film density as a function of photon energy. A high R-value indicates a denser film 15 . The IGZO film that had been SUT-activated in air had the highest R-value, while that activated in N 2 had the lowest R-value.…”

Section: Resultsmentioning

confidence: 99%

Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments

Tak

Ahn

Park

et al. 2016

Sci Rep

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Indium–gallium–zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M–O) bonds through the decomposition-rearrangement of M–O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm2/Vs, 3.96 × 107 to 1.03 × 108, and 11.2 to 7.2 V, respectively.

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Section: Resultsmentioning

confidence: 99%

Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments

Tak

Ahn

Park

et al. 2016

Sci Rep

Self Cite

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“…On the other hand, tuning the pH (by addition of NH 4 OH) and ignition temperature, combustion-derived thin films of metal nitrate–acetoacetate systems showed high device performance. To prepare zinc–tin–oxide films, Kim et al used zinc acetate, tin chloride, and ammonium nitrate . In this case, the heat released during the exothermic reaction could be varied by tuning the molar ratio between the acetate precursor and ammonia nitrate.…”

Section: Solution Combustion-derived Materialsmentioning

confidence: 99%

“…652 Optimized Ga-doped indium−zinc-oxide fabricated on SiO 2 or HfO 2 self-assembled dielectrics supported these conclusions. 652,653 Kang et al 654 and Kim et al 655 conducted a detailed parametric studies to demonstrate the influence of different metal precursors, ignition temperature, and pH for thin-film transistors using SiO 2 -based dielectrics. Kang et al used metal (e.g., In, Zn) acetates and metal chlorides as precursors to prepare the thin films.…”

Section: Chemical Reviewsmentioning

confidence: 99%

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Solution Combustion Synthesis of Nanoscale Materials

Mukasyan²,

et al. 2016

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Solution combustion is an exciting phenomenon, which involves propagation of self-sustained exothermic reactions along an aqueous or sol-gel media. This process allows for the synthesis of a variety of nanoscale materials, including oxides, metals, alloys, and sulfides. This Review focuses on the analysis of new approaches and results in the field of solution combustion synthesis (SCS) obtained during recent years. Thermodynamics and kinetics of reactive solutions used in different chemical routes are considered, and the role of process parameters is discussed, emphasizing the chemical mechanisms that are responsible for rapid self-sustained combustion reactions. The basic principles for controlling the composition, structure, and nanostructure of SCS products, and routes to regulate the size and morphology of the nanoscale materials are also reviewed. Recently developed systems that lead to the formation of novel materials and unique structures (e.g., thin films and two-dimensional crystals) with unusual properties are outlined. To demonstrate the versatility of the approach, several application categories of SCS produced materials, such as for energy conversion and storage, optical devices, catalysts, and various important nanoceramics (e.g., bio-, electro-, magnetic), are discussed.

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“…Precursor—Combustion Process : Recently, a combustion synthesis method for solution processing was reported for forming a metal oxide film at low‐temperature . The combustion process uses self‐energy to generate the combustion chemistry of the precursor solution, which is mixed with organic fuel and an oxidizer.…”

Section: Low‐temperature Technology For Various Layers Of Solution‐prmentioning

confidence: 99%

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

319

211

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Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a costeffective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 °C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxidebased channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.

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Independent chemical/physical role of combustive exothermic heat in solution-processed metal oxide semiconductors for thin-film transistors

Abstract: Based on newly-designed, solution-processable zinc tin oxide semiconductors, the independent contribution of combustive exothermic heat was investigated on chemical/physical structural evolution through spectroscopy analyses along with the interpretation on device performance.

Cited by 21 publications

References 38 publications

Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments

Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments

Solution Combustion Synthesis of Nanoscale Materials

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

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