Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

Klimeck, Gerhard

doi:10.1002/1521-3951(200107)226:1<9::aid-pssb9>3.0.co;2-y

Cited by 3 publications

(2 citation statements)

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“…It can now run efficiently on various parallel machines including commodity clusters. While typical runs with NEMO simply require a normal workstation, the exploration of details of momentum dependent transport of holes [24] and electrons [25] benefited greatly from parallelization. To enable simulation of higher resistivity structures and to explore the validity of the reservoir assumption a drift diffusion models was integrated into NEMO [26].…”

Section: Multi-band Models For High Performance Rtdsmentioning

confidence: 99%

NEMO 1-D: the first NEGF-based TCAD tool

Klimeck

2004

Simulation of Semiconductor Processes and Devices 2004

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The fundamentally sound non-Equilibrium Green's function (NEGF) approach provides the theoretical basis for NEMO 1-D as the first nanoelectronic TCAD tool. Effects of quantum charging, bandstructure and incoherent scattering from alloy disorder, interface roughness, acoustic phonons, and polar optical phonons are modeled. Engineers and experimentalists who desire a black-box design tool as well as theorists who are interested in a detailed investigation of the physics have found NEMO useful. Access to this comprehensive theoretical framework is accommodated by a graphical user interface (GUI) which configures the usage of a collection of models that trade off physical content with speed and memory requirements. This article describes the NEMO origin, provides modern references to NEGF, accumulates the diverse references to the NEMO results, and provides a perspective on NEGF in future TCAD tools. History and AcknowledgementsThe nanoelectronic modeling (NEMO) program is the result of a multi-year development effort involving an industrial research laboratory (Central Research Laboratory of Texas Instruments, later transferred to Raytheon TI Systems), several Universities (UT Dallas, Ohio State U., U. Alabama in Huntsville), and a US Federally Funded Development and Research Center (NASA, JPL, California Institute of Technology). The original development began in 1993 with the lead of TI and concluded with the delivery of the tool to the US government sponsor in January of 1998. The development then shifted to the NASA Jet Propulsion Laboratory. A large number of people involved with the NEMO 1-D code over the past 11 years. I would especially like to acknowledge the key contributors to the development of the tool: Drs. Roger Lake, R. Chris Bowen, Dan Blanks, Bill Frensley, and Tim Boykin. The primary application focus was the quantitative modeling of resonant tunneling diodes (RTDs). These III-V high speed devices were developed for high speed applications such as analog-digital-converters [1] and memory devices [2]. Modern NEGF Method References for Carrier TransportNovel aspects of the theory developed under the NEMO program are described in detail in [3]. Early work on the NEGF approach has been focussed on bulk many-body interactions and the literature was difficult to penetrate. Just over the past few years Datta has published [4,5] introductions to NEGF that enable the electrical engineer to

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Section: Multi-band Models For High Performance Rtdsmentioning

confidence: 99%

NEMO 1-D: the first NEGF-based TCAD tool

Klimeck

2004

Simulation of Semiconductor Processes and Devices 2004

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“…If B is positive, it means that the renormalized mass is smaller than emitter mass and we may expect off-zone center current flow. 13 In fact, from Eq. ͑4͒ one can get…”

Section: ͑4͒mentioning

confidence: 99%

Off-center electron transport in resonant tunneling diodes due to incoherent scattering

2003

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Coherent transport through resonant tunneling diodes at high bias is determined by the transfer of carriers described by momentum and energy from a bath in the emitter through a central resonance to the collector. Simplified treatments of coherent carrier transport assume the transverse carrier dispersions to be identical and parabolic in the emitter and central device. This results in a carrier transport that is dominated by carriers at the ⌫ zone center. Other work has shown that more realistic dispersions result in off-zone center current flow. Incoherent scattering adds more degrees of freedom to match the emitter energy and momentum (E em ,k em ) with the resonance energy and momentum (E res ,k res ) with (⌬E scatt ,⌬k scatt ). It is shown analytically and numerically that this additional degree of freedom redirects carriers in energy and momentum space resulting in an off-zone center current for large voltage regions. Interface roughness, polar optical phonon, and acoustic phonon scatterings are explicitly considered.

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