Indistinguishable single photons from a single-quantum dot in a two-dimensional photonic crystal cavity

Laurent, S.; Varoutsis, S.; Gratiet, L. Le; Lemaı̂tre, A.; Sagnes, I.; Raineri, Fabrice; Levenson, Ariel; Robert-Philip, I.; Abram, I.

doi:10.1063/1.2103397

Cited by 109 publications

(70 citation statements)

References 14 publications

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“…There is oneto-one In nanocrystal to InAs island correspondence, because the initial and final densities match. In accordance with previous reports [10], the InAs islands flatten and develop a local wetting layer elongated along [0][1][2][3][4][5][6][7][8][9][10][11]. For the symmetric In nanocrystals on the c(4 x 4) reconstructed surface ( Fig.…”

Section: Resultssupporting

confidence: 72%

“…InAs/GaAs quantum dots (QDs) are prime candidates for solidstate realization of functionalities such as qubits [1], quantum gates [2], single photon sources [3,4], and cavity quantum electrodynamics systems [5]. Such applications require reproducible and well controllable means of obtaining low-density QDs, as a single QD is the basic building block of the above mentioned devices.…”

Section: Introductionmentioning

confidence: 99%

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Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals

Urbanczyk

Nötzel

2012

Journal of Crystal Growth

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We report growth of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy with low density of 2 iim~2 by conversion of In nanocrystals deposited at low temperatures. The total amount of InAs used is about one monolayer, which is less than the critical thickness for conventional Stransld-Krastanov QDs. We also demonstrate the importance of the starting surface reconstruction for obtaining uniform QDs. The QD emission wavelength is easily tunable upon post-growth annealing with no wetting layer signal visible for short anneals. Microphotoluminescence measurements reveal well separated and sharp emission lines of individual QDs.

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Section: Resultssupporting

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals

Urbanczyk

Nötzel

2012

Journal of Crystal Growth

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“…We stress the importance of accounting for the microscopic non-Markovian dephasing processes: for large detunings the quantity ( 0)h −2 enters in the theory as an effective puredephasing rate, but it is typically three orders of magnitude larger than dephasing rates extracted when interpreting experiments with a Markovian model. 32 045316-4…”

Section: Extracting and Modeling The Effective Phonon Density Of Smentioning

confidence: 99%

Measuring the effective phonon density of states of a quantum dot in cavity quantum electrodynamics

et al. 2013

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(2013). Measuring the effective phonon density of states of a quantum dot in cavity quantum electrodynamics. Physical Review B Condensed Matter, 88(4) We employ detuning-dependent decay-rate measurements of a quantum dot in a photonic-crystal cavity to study the influence of phonon dephasing in a solid-state quantum-electrodynamics experiment. The experimental data agree with a microscopic non-Markovian model accounting for dephasing from longitudinal acoustic phonons, and the analysis explains the difference between nonresonant cavity feeding in different nanocavities. From the comparison between experiment and theory we extract the effective phonon density of states experienced by the quantum dot in the nanocavity. This quantity determines all phonon dephasing properties of the system and is found to be described well by a theory of bulk phonons.

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“…Furthermore, the emission wavelength is given by the cavity frequency and would be less sensitive to spectral jumps in the QD emission wavelength. A maximum wave packet overlap of $0:81 has been reported for a QD coupled to a micropost [26], 0.72 for a photonic crystal cavity [27], and 0.67 for a waveguide-coupled cavity by this group [28]. In this experiment, the cavity emission under resonant excitation of the QD was too low to measure the indistinguishability, in part because of low coupling efficiency ($0:1) into the single mode fiber in our Hong-Ou-Mandel setup.…”

mentioning

confidence: 99%

Resonant Excitation of a Quantum Dot Strongly Coupled to a Photonic Crystal Nanocavity

et al. 2010

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We describe the resonant excitation of a single quantum dot that is strongly coupled to a photonic crystal nanocavity. The cavity represents a spectral window for resonantly probing the optical transitions of the quantum dot. We observe narrow absorption lines attributed to the single and biexcition quantum dot transitions and measure antibunched population of the detuned cavity mode [g ð2Þ ð0Þ ¼ 0:19]. DOI: 10.1103/PhysRevLett.104.073904 PACS numbers: 42.70.Qs, 42.50.Ct, 42.50.Dv, 78.67.Hc Photonic nanocavities coupled to semiconductor quantum dots (QDs) are becoming well developed systems for studying cavity quantum electrodynamics and constructing devices for quantum information processing. Recent experiments have found remarkably strong emission at the cavity resonance even when the QD emission was far detuned [1][2][3][4]. In these experiments the QD was pumped through the wetting layer, which allows for multiexciton processes through the wetting layer or a multi-QD effective continuum. In contrast, in this Letter we investigate the resonant excitation of an InAs quantum dot that is strongly coupled to a photonic crystal cavity. We show that the resonantly excited QD emits efficiently through the cavity mode and model the interaction by a phonon-mediated dephasing model [5][6][7]. In this experiment, the cavity signal effectively becomes a spectrally separated readout channel for high-resolution single quantum dot spectroscopy. In addition, because the QD is resonantly excited, the antibunched cavity emission has the potential for low timing jitter and high photon indistinguishability [7,8].The optical system consists of a photonic crystal (PC) cavity fabricated in a 160-nm thick GaAs membrane which contains a central layer of self-assembled InGaAs QDs. As shown in Fig. 1(c), we employ a grating-integrated cavity (GIC) design [9], based on a linear three-hole defect cavity [10]. The GIC design incorporates a second-order grating around the cavity, as seen in the perturbations in Figs. 1(b) and 1(c), which couple plane waves with low in-plane k vectors with the cavity mode.We first characterize the QD-cavity system by its photoluminescence (PL) under nonresonant excitation at a temperature between 10 and 50 K. A continuous-wave (cw) laser at p ¼ 860 nm excites electron-hole pairs which can relax through a phonon-mediated process into radiative levels of the QD [ Fig. 1(d)]. Figure 1(e) plots the anticrossing between the QD-like and cavitylike states. Fits to the anticrossing spectra yield the system parameters summarized in Fig. 1(d).We measure the reflection of the cavity by the crosspolarized reflectivity method illustrated in Fig. 1(a), as in our earlier work [11]. The cavity is polarized at 45 to the vertical input beam, while the reflection is detected in the horizontal polarization on a charge coupled device (CCD). The table lists the system parameters derived from the measurements, where g, , Ã are the vacuum Rabi frequency, cavity field decay rate, and dipole dephasing rate, respectively. The dip...

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Indistinguishable single photons from a single-quantum dot in a two-dimensional photonic crystal cavity

Cited by 109 publications

References 14 publications

Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals

Low-density InAs QDs with subcritical coverage obtained by conversion of In nanocrystals

Measuring the effective phonon density of states of a quantum dot in cavity quantum electrodynamics

Resonant Excitation of a Quantum Dot Strongly Coupled to a Photonic Crystal Nanocavity

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