Indium‐Assisted Plasma‐Enhanced Low‐Temperature Growth of Silicon Oxide Nanowires

Abstract

The nanowires of the silicon oxide SiOx (x ≤ 2) are synthesized on an indium catalyst by the gas‐jet electron beam plasma chemical vapor deposition (GJ EBP CVD) method using a monosilane‐argon‐hydrogen mixture with the simultaneous supply of the oxygen into the vacuum chamber. The arrays of the aligned microropes (bundles) of nanowires are formed at the substrate temperatures of 200–335 °С. At the temperature of 160 °С the cocoon‐like structures of SiOx nanowires are synthesized. The obtained results are explained within the synthesis model suggested previously. The Fourier transform infrared (FTIR) transmittance spectra are recorded to study the chemical composition of the nanowires. It is shown that the nanowires synthesized at temperatures of 200–335 °С consist of SiOx with x = 1.93 ± 0.04. The arrays of the oriented microropes of the SiOx nanowires exhibit the intense photoluminescence at a room temperature with a maximum in a range of the energies from 2 to 3 eV. The photoluminescence spectra of the oriented microropes synthesized on silicon substrates with the indium catalyst are shifted toward lower energies from 2.7–2.8 to 2.4–2.5 eV at the changing growth temperatures from 200 to 335 °C.

Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

“…The AS 1 outcomes from the motion of the adjacent oxygen atoms move in phase with each other, whereas at AS 2 the oxygen atoms move 180° out of phase. The presence of this shoulder is a feature of the IR spectra of the SiO x material, where the x value is equal to one or higher [ 8 , 26 , 27 ]. Around 465 cm −1 , an Si−O−Si vibration is also observed [ 8 , 26 ].…”

“…The presence of this shoulder is a feature of the IR spectra of the SiO x material, where the x value is equal to one or higher [ 8 , 26 , 27 ]. Around 465 cm −1 , an Si−O−Si vibration is also observed [ 8 , 26 ]. For the Bi-free SiNW sample, Si–H bending vibrations are located around 875 cm −1 [ 8 , 27 ].…”

Antireflective, Transparent, Water-Resistant, and Antibacterial Zn-Doped Silicon Oxide Thin Films for Touchscreen-Based Display Applications

“…The corresponding FTIR absorbance spectra of the as-deposited and water-dipped SZ0.29O thin films are shown in Figure S7. As earlier mentioned, the observed absorption bands at approximately 460, 793, 1038, and 1386 cm –1 correspond to the vibration of SiO 2 molecule, whereas the bands at approximately 410, 675, and 917 cm –1 indicate the ZnO phase. − However, there is no hydroxide phase observed for the water-dipped SZO sample as there is not appearance of any absorption bands at approximately 2500 and 3400 cm –1 corresponding to the −OH group vibration. Moreover, the amount of the SiO 2 phase in the water-dipped SZO film is notably higher than the as-deposited thin film, which can be clearly observed from the intensity of the Si–O absorption band at 1038 cm –1 in FTIR spectrum.…”

“…The corresponding FTIR absorbance spectra of all SZO thin films are shown in Figure e. The observed absorption bands at approximately 465, 795, 1020, and 1386 cm –1 correspond to the vibration of SiO 2 molecule, while the bands at approximately 410, 675, and 910 cm –1 indicate the ZnO phase. − In particular, the intense band at approximately 795 and 1022 cm –1 , mainly indicative of the silicon oxide phase, can be attributed to the asymmetric and symmetric stretching vibrations of Si–O–Si units, respectively. , In addition, by increasing the Zn DC power, the amount of zinc in SZO films relatively increased, which was clearly observed from the intensity of the absorption band at 910 cm –1 corresponding to the stretching of the Zn–O in FTIR spectrum. The intensity ratio of 910 and 1020 cm –1 absorption bands, as depicted in Figure f, reveals the increasing amount of zinc and the homogeneous distribution of ZnO with increasing Zn DC power.…”