Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

Zamiri, Marziyeh; Klein, Brianna; Schuler-Sandy, Ted; Myers, Stephen; Dahiya, Vinita; Cavallo, Francesca; Krishna, S.

doi:10.1063/1.4943248

Cited by 13 publications

(3 citation statements)

References 10 publications

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“…In this regard, Zhang et al [191] successfully transferred large-area InAs/InAsSb T2SLs thin film onto a Si substrate through a lift-off method and wafer-bonding techniques. Unlike other transfer methods resulting in conspicuous degradation in electrical performance [192], the LWIR PDs fabricated by this wafer-bonding method exhibited a comparable dark current density to those of reported devices based on traditional GaSb substrates with similar operating conditions. The complete fabrication process including the device epi-structure, transfer process, and fabrication process of PDs is presented in figure 17(c).…”

Section: Sb-based Ir Pds Integrated To a Si Platformmentioning

confidence: 74%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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Reduction in the size, weight, and power consumption of an infrared (IR) detection system (referred to as SWaP) is one of the critical challenges lying ahead for the development of nowadays IR detector technology, especially for Mid-/Long-wavelength IR wavebands, which calls for high operating temperature (HOT) IR photodetectors with good sensitivity that would ease the burden for the cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR photodetectors and focal plane array (FPA) imagers have gradually stepped into real world applications after decades of development, thanks to their outstanding material properties, tunability of cut-off wavelengths, feasibility of device designs, and great potentials for mass production with low costs. Meanwhile, emerging demands of versatile applications seek for fast, compact and smart IR detection systems, in which integration of Sb-based IR photodetectors on the Si platform enables the direct information readout and processing with Si based microelectronics. This paper reviews recent progress in Sb-based HOT IR photodetectors and FPAs, which includes the fundamental material properties and device designs based on the bulk InAsSb, InAs/GaSb and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers the new trends of development in the Sb-based IR photodetectors like optical engineering for signal harvesting, photonic integration techniques, as well as MOCVD growth of antimonides. Finally, challenges and possible solutions for future works are provided from the perspectives of material growth, device design and imaging system. These new advances may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs) by identifying existing challenges, and find more extensive emerging applications.

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Section: Sb-based Ir Pds Integrated To a Si Platformmentioning

confidence: 74%

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Jia

Deng

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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“…Residual Al0.4Ga0.6Sb may result in an increased roughness of the membrane backside, thereby promoting a weak bond between the membrane and the new substrate. Transfer of membranes on metal-coated substrates may also be used to provide the T2SL with electrical contacts via interface bonding (23,33). In this scenario, a residual Al0.4Ga0.6Sb will drastically increase the resistance of the contact.…”

Section: Resultsmentioning

confidence: 99%

Antimonide-based membranes synthesis integration and strain engineering

Zamiri

Anwar

Klein

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

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Antimonide compounds are fabricated in membrane form to enable materials combinations that cannot be obtained by direct growth and to support strain fields that are not possible in the bulk. InAs/(InAs,Ga)Sb type II superlattices (T2SLs) with different in-plane geometries are transferred from a GaSb substrate to a variety of hosts, including Si, polydimethylsiloxane, and metalcoated substrates. Electron microscopy shows structural integrity of transferred membranes with thickness of 100 nm to 2.5 µm and lateral sizes from 24 × 24 µm 2 to 1 × 1 cm 2 . Electron microscopy reveals the excellent quality of the membrane interface with the new host. The crystalline structure of the T2SL is not altered by the fabrication process, and a minimal elastic relaxation occurs during the release step, as demonstrated by X-ray diffraction and mechanical modeling. A method to locally strain-engineer antimonide-based membranes is theoretically illustrated. Continuum elasticity theory shows that up to ∼3.5% compressive strain can be induced in an InSb quantum well through external bending. Photoluminescence spectroscopy and characterization of an IR photodetector based on InAs/GaSb bonded to Si demonstrate the functionality of transferred membranes in the IR range.antimonide | membranes | transfer | infrared | integration E pitaxially grown Sb compounds have recently received increasing attention as functional layers in IR detectors (1-4) and sources (5-9), high-mobility transistors (10-12), resonant tunneling diodes (13-15), and low-power analog and digital electronics (10,16). In this scenario we establish a versatile process to release and transfer Sb-based heterostructures from their epitaxial growth substrate to any host, resulting in fabrication of freestanding membranes (17,18). Despite the numerous demonstrations of membrane technology applied to III-V semiconductors (18-26), fabrication and detailed characterization of Sb compounds in membrane form has not been reported. For the purpose of this work we investigate InAs/(Ga,InAs)Sb type II superlattices (T2SLs) and AlInSb/InSb quantum wells (QWs), but our approach is readily applicable to any Sb-containing heterostructure. We demonstrate that wet and dry techniques (17, 18) (i.e., transfer in liquid or mediated by a stamp, respectively) yield successful transfer of T2SL membranes with thickness ranging from 100 nm to 2.5 µm, and lateral sizes going from 24 × 24 µm 2 to 1 × 1 cm 2 . We bond InAs/(InAs,Ga)Sb T2SLs to a large variety of hosts, including elastomers and rigid substrates, and both insulating and semiconducting substrates. Electron microscopy and X-ray diffraction (XRD) show that the crystal structure and the strain state of the materials are minimally altered during the release and transfer process. Mechanical modeling establishes that elastic strain up to ∼3.5% can be imparted in nanoscale-thickness AlInSb/InSb/AlInSb membranes by external bending. Finally, we demonstrate the functionality of Sbbased superlattices bonded to Si via photoluminescence (PL) and cha...

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“…Fabrication of the 24 μm × 24 μm InAsSb pixels and their transfer to carrier substrates are described in detail in ref. 22 . The pixel period pre-transfer was ~30 μm, and following transfer to the thermal release tape the pixel array consisted of a >4 mm × 4 mm pattern with a fill factor of ~0.5.…”

Section: Methodsmentioning

confidence: 99%

Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits

et al. 2019

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The measurement of minority carrier lifetimes is vital to determining the material quality and operational bandwidth of a broad range of optoelectronic devices. Typically, these measurements are made by recording the temporal decay of a carrier-concentration-dependent material property following pulsed optical excitation. Such approaches require some combination of efficient emission from the material under test, specialized collection optics, large sample areas, spatially uniform excitation, and/or the fabrication of ohmic contacts, depending on the technique used. In contrast, here we introduce a technique that provides electrical readout of minority carrier lifetimes using a passive microwave resonator circuit. We demonstrate >10 5 improvement in sensitivity, compared with traditional photoemission decay experiments and the ability to measure carrier dynamics in micron-scale volumes, much smaller than is possible with other techniques. The approach presented is applicable to a wide range of 2D, micro-, or nano-scaled materials, as well as weak emitters or non-radiative materials.

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Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

Cited by 13 publications

References 10 publications

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Antimonide-based high operating temperature infrared photodetectors and focal plane arrays: a review and outlook

Antimonide-based membranes synthesis integration and strain engineering

Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits

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