Indium content dependent VOCs interactions in monolithic InGaN/GaN multi quantum well structures grown by MOCVD

Chidambaram, David; Ganesh, Venkataraman; Marappan, Gobinath; Sivalingam, Yuvaraj

doi:10.1016/j.mssp.2019.104694

Cited by 14 publications

(1 citation statement)

References 32 publications

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“…For work function measurement, pure and Zn-doped CuO films were coated on conducting an indium-tin oxide (ITO) substrate using the doctor blade method. The contact potential difference (CPD) measurements of the prepared films were carried out by a scanning Kelvin probe technique (SKP) system using a surface photovoltage (SPV) module (SKP5050 with SPV020 module, KP Technologies Ltd., UK) as described elsewhere [26,27]. From the CPD, the work function (in meV) was measured:…”

Section: Work Function Measurementsmentioning

confidence: 99%

Effect of Zn Doping in CuO Octahedral Crystals towards Structural, Optical, and Gas Sensing Properties

Goyal

Rajan

et al. 2020

Crystals

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Monodispersed CuO octahedral crystals were successfully synthesized using a low-temperature co-precipitation method. Zinc doping in CuO created surface defects that enhanced oxygen adsorption on the surface crucial for gas sensing applications. Pure and Zn-doped CuO sensor films were realized using the doctor blade method. The sensor films showed selective response towards a low concentration of NO2 at a lower operating temperature of 150 °C. Doping with Zn causes the resistance of the sensor film to decrease due to the enhancement of charge carriers with an analogous improvement in the sensor response. The observed decrease in sensor resistance agreed well with the findings of the work function studies. Zinc doping resulted in an increase in work function by 180 meV which, after NO2 exposure, was found to increase by a further 130 meV, attributed to the oxidizing behavior of the test gas.

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Section: Work Function Measurementsmentioning

confidence: 99%

Effect of Zn Doping in CuO Octahedral Crystals towards Structural, Optical, and Gas Sensing Properties

Goyal

Rajan

et al. 2020

Crystals

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Novel Ternary Nitride Thin Film‐Based Self‐Powered, Broad Spectral Responsive Photodetector with a High Detectivity for Weak Light

George

Vikraman

Reji

et al. 2022

Adv Materials Technologies

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with titanium nitride (TiN) as the most common example. [1] Along with their superior mechanical properties, these are good conductors being employed as permanent contact layers and diffusion barriers in microelectronics. [1] In addition, nitrides are well explored as novel piezoelectric and thermoelectric materials, generally in the area of energy harvesting (e.g., aluminium nitride (AlN)). AlN has been well studied in the past 20 years due to its excellent properties, such as wide bandgap, high thermal conductivity, high hardness, and high thermal stability. Its thin film has a high piezoelectric coefficient (d 33 = 5.5 pCN -1 ). [2] There is a plethora of literature available on transition metal nitride in both thin-film and bulk forms for various applications. [1] Among nitrides, the ternary transition metal nitrides (TTMNs), particularly II-IV-N 2, have emerged as a recent attraction in the electronic industry due to their attractive structural and electrical properties and, importantly, the ability to offer tunable properties such as bandgap, etc. [1] The small amount of scandium (Sc)-doping into AlN significantly increased the piezoelectric properties. [2] The most explored prototypes in this category Self-powered, wide-spectral response, fast, and high-sensitivity photo detectors are essential for developing next-generation optoelectronic devices. In this work, the predicted optoelectronic properties of the ternary metal-zinc (Zn)nitride (N) thin films are experimentally demonstrated. A novel phase of the Titanium (Ti)-Zn-N system (dominantly TiZnN 2 film of ≈235 nm thickness) is developed on the p-Si substrate, which shows excellent optoelectronic properties. The Indium Tin Oxide (ITO)/TiZnN 2 /p-type Si (p-Si) photodetector of area ≈4 mm 2 exhibits an impressive responsivity of 1.22 × 10 -4 A W −1 at 0 V and 40 mA W −1 at −4 V, a specific detectivity up to 1.16 × 10 9 Jones at 0 V, and a response speed of 1.9 ms at zero external bias (i.e., self-powered mode). Benefiting from the broad-band absorption of the film and p-Si combination, the detection range is observed from the ultraviolet to near-infrared (300-1150 nm). Simultaneous operation of self-powered photo-triggered drip irrigation ON and street light OFF in the early morning and vice-versa in the evening is demonstrated for autonomous farming. The device is insensitive to humidity and ambiance, and generates a photocurrent with light intensity as low as 5 mW cm −2 . The active layer is hydrophobic and highly stable, and the fabrication is cost-effective.

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Surface photovoltage measurement of PM10 atmospheric aerosols collected over SRMIST-Kattankulathur campus (12.81° N & 80.03° E): a step towards utilization of atmospheric aerosols in optoelectronic applications

Marappan

Reji

Mohan

et al. 2022

J Mater Sci: Mater Electron

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Indium content dependent VOCs interactions in monolithic InGaN/GaN multi quantum well structures grown by MOCVD

Cited by 14 publications

References 32 publications

Effect of Zn Doping in CuO Octahedral Crystals towards Structural, Optical, and Gas Sensing Properties

Effect of Zn Doping in CuO Octahedral Crystals towards Structural, Optical, and Gas Sensing Properties

Novel Ternary Nitride Thin Film‐Based Self‐Powered, Broad Spectral Responsive Photodetector with a High Detectivity for Weak Light

Surface photovoltage measurement of PM10 atmospheric aerosols collected over SRMIST-Kattankulathur campus (12.81° N & 80.03° E): a step towards utilization of atmospheric aerosols in optoelectronic applications

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