2008
DOI: 10.1063/1.2975176
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Indium-free transparent organic light emitting diodes with Al doped ZnO electrodes grown by atomic layer and pulsed laser deposition

Abstract: We present highly efficient transparent organic light emitting diodes (OLEDs) with Al doped ZnO (AZO) electrodes prepared by atomic layer deposition and pulsed laser deposition (PLD). The power and current efficiencies exceed 27 lm/W and 44 cd/A at a brightness level of 100 cd/m2, respectively. At the same time, the transmissivity of the devices is above 73% in the visible part of the spectrum. Owing to an efficient WO3 buffer layer and an optimized PLD process for the deposition of the top AZO electrode, the … Show more

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Cited by 131 publications
(78 citation statements)
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“…Similar to that of ITO, some extrinsic dopants, such as Al and Ga, are added into the ZnO films to improve the film conductivity by introducing ionic impurities. 33,45,89 Hence, these Al-doped ZnO (AZO) 33,90,91 and Ga-doped ZnO (GZO) 21,92 films show comparable optical transparency and electrical conductivity as the ITO layers and have been developed as TEs in optoelectronic devices. AZO and GZO have a work function range of 4.0 to 5.0 eV depending on the surface treatments.…”
Section: Transparent Conductive Oxidesmentioning
confidence: 99%
“…Similar to that of ITO, some extrinsic dopants, such as Al and Ga, are added into the ZnO films to improve the film conductivity by introducing ionic impurities. 33,45,89 Hence, these Al-doped ZnO (AZO) 33,90,91 and Ga-doped ZnO (GZO) 21,92 films show comparable optical transparency and electrical conductivity as the ITO layers and have been developed as TEs in optoelectronic devices. AZO and GZO have a work function range of 4.0 to 5.0 eV depending on the surface treatments.…”
Section: Transparent Conductive Oxidesmentioning
confidence: 99%
“…In addition, MoO 3 and WO 3 have been identified as ITO sputtering protection layer in OLEDs and organic solar cells, where a 40-60 nm thick metal oxide layer can effectively prevent the sensitive organic layers from the high kinetic particle bombardment. [34][35][36] We note that thermally evaporated metal oxides, such as MoO 3 and WO 3 , grow as sub-stoichiometric thin film, which make these materials n-type conductive due to oxygen vacancies. 37 On the other hand, a very strong chemical reduction, e.g., as a result of high evaporation temperatures or adsorbates on the surface, leads to a different metal oxide composition with a high amount of MoO 2 and WO 2 suboxides.…”
mentioning
confidence: 99%
“…We should note that the conductivity of ALD fi lms depend upon several parameters, such as reactor temperature, substrate material, and Al 2 O 3 :ZnO ratio for nanolaminate fi lms. [ 19,25 ] With this in mind, further optimization of the ALD processing conditions will be needed for other BHJ materials requiring lower processing temperatures. The origin of the improved R P A values in T1 type devices compared to values in T3 type devices can be attributed to a reduction on the pinhole density in ALD nanolaminates compared to neat fi lms grown by ALD.…”
Section: Charge Recombination Layersmentioning
confidence: 99%