Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy

“…The solubility of indium in a nitride crystal increases significantly as the temperature is reduced [17,[21][22][23][24]. The maximum indium content for a given nitrogen flux and growth temperature can be found when growth is performed under an indium adlayer.…”

Validity of Vegard’s rule for Al1−xInxN (0.08 < x < 0.28) thin films grown on GaN templates

“…The relaxed a 0 and c 0 lattice parameters of AlN and InN and respective C 13 and C 33 stiffness coefficients [42][43][44] used in this work are listed in table 1.…”

“…For growth by metal organic chemical vapour deposition (MOCVD), quality quickly deteriorates for InN contents above ~30% due to strain relaxation and phase separation [8,9]. Ternaries with high InN contents are more readily obtained by low temperature growth techniques such as molecular beam epitaxy (MBE) [10][11][12][13] or reactive frequency magnetron sputtering (RFMS) [14][15][16][17][18][19]. On the other hand, many MOCVD groups have grown high quality Al 1−x In x N/GaN in the near-lattice-matched region [3,8,[20][21][22][23][24][25][26].…”

Influence of nitridation process on characteristics of N-polar AlGaN films grown by MOCVD

“…In order to improve the crystalline quality of N-polar GaN or InGaN epi-layers, some valuable works were carried out by various research groups [8][9][10][11]. In particular, it was recently reported by our group that both the electrical and optical properties for the N-polar GaN epi-layers could be significantly improved by using the flow-rate-modulation technology [12].…”